Abstract:Since the early 1960s, alloys are commonly grouped into two classes, featuring bound states in the bandgap (I) or additional, non-discrete band states (II). Microscopic material parameters for class I alloys can directly be extracted from photoluminescence (PL) spectra, whereas any conclusions drawn for class II alloys usually remain indirect and limited to macroscopic assertions. Nonetheless, here, we present a spectroscopic study on exciton localization in a so-called mixed crystal alloy (class II) that allows us to access microscopic alloy parameters. We study bulk In$_x$Ga$_{1-x}$N epilayers at the onset of alloy formation (0 $\leq$ $x$ $\leq$ 2.4%) in order to understand the material's particular robustness to defects. Based on an in-depth PL analysis it is demonstrated how different excitonic complexes (free, bound, and complex bound excitons) can serve as a probe to monitor the dilute limit of class II alloys. From an $x$-dependent linewidth analysis we extract the length scales at which excitons become increasingly localized, meaning that they convert from a free to a bound particle upon alloy formation. Already at x = 2.4% the average exciton diffusion length is reduced to 5.7 $\pm$ 1.3 nm at a temperature of 12 K, thus, detrimental exciton transfer mechanisms towards non-radiative defects are suppressed. In addition, the associated low temperature PL data suggests that a single indium atom does not suffice in order to permanently capture an exciton. Micro-PL spectra even give access to a forthright probing of silicon bound excitons embedded in a particular environment of indium atoms, thanks to the emergence of a hierarchy of individual, energetically sharp emission lines (full width at half maximum $\approx$ 300 $\mu$eV). Consequently, the present study allows us to extract first microscopic alloy properties formerly only accessible for class I alloys.

Elastically Frustrated Rehybridization: Origin of Chemical Order and Compositional Limits in InGaN Quantum Wells

Fabrication and Characterization of Novel Monolayer InN Quantum Wells in a GaN Matrix

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Microscopic Indium Distribution and Electron Localization in Zinc Blende InGaN Alloys and InGaN/GaN Strained Quantum Wells

High-indium-content InGaN Quantum-Well Structure Grown Pseudomorphically on a Strain-Relaxed InGaN Template Layer

Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Probing alloy formation using different excitonic species: The particular case of InGaN

High Precision Determination of the Elastic Strain of InGaN/GaN Multiple Quantum Wells

Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Simulation of self-assembled compositional core-shell structures in In x Ga 1 − x N nanowires

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

The Discrepancies Between Theory and Experiment in the Optical Emission of Monolayer In(Ga)N Quantum Wells Revisited by Transmission Electron Microscopy

Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Strain Induced Composition Profile in InGaN/GaN Core–shell Nanowires

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

Indium Compositional Homogeneity in In$_{0.17}$Al$_{0.83}$N Epilayers Grown by Metal Organic Chemical Vapor Deposition

Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors