Abstract:Diamond has outstanding physical properties: the hardest known material, a wide band gap, the highest thermal conductivity, and a very high Debye temperature. In 2004, Ekimov et al. discovered that heavily boron-doped (B-doped) diamond becomes a superconductor around 4 K. Our group successfully controlled the boron concentration and synthesized homoepitaxially grown superconducting diamond films by a CVD method. By CVD method, we found that superconductivity appears when the boron concentration (nB) exceeds a metal-insulator transition concentration of 3.0x10^20 cm^-3 and its Tczero increases up to 7.4 K with increasing nB. We additionally elucidated that the holes formed at the valence band are responsible for the metallic states leading to superconductivity. The calculations predicted that the hole doping into the valence band induces strong attractive interaction and a rapid increase in Tc with increasing boron concentration. According to the calculations, if substitutional doped boron could be arranged periodically or the degree of disorder is reduced, a Tc of approximately 100 K could be achieved via minimal percent doping. In this work, we have successfully observed zero resistivity above 10 K and an onset of resistivity reduction at 25.2 K in heavily B-doped diamond film. However, the effective carrier concentration is similar to that of superconducting diamond with a lower Tc. We found that the carrier has a longer mean free path and lifetime than previously reported, indicating that this highest Tc diamond has better crystallinity compared to that of other superconducting diamond films. In addition, the susceptibility shows a small transition above 20 K in the high quality diamond, suggesting a signature of superconductivity above 20 K. These results strongly suggest that heavier carrier doped defect-free crystalline diamond could give rise to high Tc diamond.

Microscopic Evidence for Evolution of Superconductivity by Effective Carrier Doping in Boron-doped Diamond:11B-NMR study

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Superconductivity in heavily boron-doped silicon carbide

Unraveling the Role of Boron Dimers in the Electrical Anisotropy and Superconductivity in Boron-doped diamond

The superconductivity in boron-doped polycrystalline diamond thick films

Signature of high Tc around 25K in higher quality heavily boron-doped diamond

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films

Wohlleben Effect and Emergent Pi junctions in superconducting Boron doped Diamond thin films

Specific heat and electronic states of superconducting boron-doped silicon carbide

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

Evidence of unconventional superconductivity in the Ni-doped NbB2 system

Electron-Phonon Coupling In A Boron-Doped Diamond Superconductor

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

Lattice parameters and thermal expansion of superconducting boron-doped diamonds

Simulating the effect of boron doping in superconducting carbon

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Superconductivity of hexagonal heavily-boron doped silicon carbide

Effects of Rashba-spin-orbit coupling on superconducting boron-doped nanocrystalline diamond films: evidence of interfacial triplet superconductivity

Superconductivity and Metallic Behavior in Heavily Doped Bulk Single Crystal Diamond and Novel Transportation Behavior at Graphene/Diamond Heterostructure