Abstract:Following a brief report on high-temperature superconductivity in B-doped Q-carbon [Bhaumik et al., ACS Nano 11(6), 5351–5357 (2017)], we present detailed structure-property correlations to understand the origin of superconductivity in strongly bonded lightweight materials and methods to further enhance the superconducting transition temperature (Tc). Nanosecond melting of carbon in a super undercooled state and rapid quenching result in a strongly bonded unique phase of B-doped Q-carbon. The temperature-dependent resistivity and magnetic susceptibility measurements demonstrate type II superconductivity in this material with a transition temperature of 36.0 ± 0.5 K and an upper critical field of 5.4 T at ∼0 K. It has also been shown that in B-doped Q-carbon, the upper critical magnetic field (Hc2(T)) follows Hc2(0) [1-(T/Tc)2.1] temperature dependence and is consistent with the Bardeen–Cooper–Schrieffer formalism. In the present study, B-doped Q-carbon thin films are formed on sapphire substrates by employing pulsed laser annealing (PLA) using a nanosecond excimer laser. This process involves the rapid quenching of highly undercooled melt of homogenously mixed B and C. Through the structure-property correlation measurements in B-doped Q-carbon, we estimate a higher electronic density of states near the Fermi level. Higher density of states near the Fermi-level along with higher Debye temperature and phonon frequency are responsible for the enhanced Tc. As a result of rapid melting and quenching, we can achieve 17.0 ± 1.0 or higher atomic % of B in the electrically active sites of Q-carbon which leads to the formation of shallow electronic states near the valence band maximum. From the critical current density versus field moments, the value of critical current density (Jc (2T)) in B-doped Q-carbon at 21 K is calculated as 4.3 × 107 A cm−2, which indicates that this novel material can be used for the persistent mode of operation in MRI and nuclear magnetic resonance applications. This discovery of high-temperature superconductivity in B-doped amorphous Q-carbon shows that the non-equilibrium synthesis technique using the super undercooling process can be used to fabricate materials with greatly enhanced physical properties.

Simulating the effect of boron doping in superconducting carbon

Effects of Carbon-Doping on Superconductivity in Magnesium Diboride

First-principles molecular dynamics simulations for the properties of boron-doped tetrahedral amorphous carbon

A novel high-temperature carbon-based superconductor: B-doped Q-carbon

Magnetic relaxation and three-dimensional critical fluctuations in B-doped Q-carbon - a high-temperature superconductor

High-T$_c$ Superconductivity in doped boron-carbon clathrates

Superconductivity in boron-doped carbon nanotube networks

Prediction of superconductivity in metallic boron-carbon compounds from 0 to 100 GPa by high-throughput screening

Effect of carbon doping on the structure and superconductivity in AlB2-type (Mo0.96Ti0.04)0.8${(\text{Mo}_{0.96}\text{Ti}_{0.04})}_{0.8}$B-2

Superconductivity in Two-Dimensional Boron Allotropes

Prediction of Quasi-One-dimensional Superconductivity in Metastable Two-Dimensional Boron

M-I Transition in a-Conducting Carbon Films Induced by Boron Doping

Specific heat and electronic states of superconducting boron-doped silicon carbide

Effect of Boron Doping on the Interlayer Spacing of Graphite

Effect of Carbon Doping on the Structure and Superconductivity in AlB$_{2}$-type (Mo$_{0.96}$ti$_{0.04}$)$_{0.8}$b$_{2}$

Effect of Carbon Doping on the Structure and Superconductivity in AlB2‐type (Mo0.96ti0.04)0.8${(\text{mo}_{0.96}\text{ti}_{0.04})}_{0.8}$b2

Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

Effect of Boron Doping on the Electrical Conduction of Tetrahedral Amorphous Carbon Films

Carbon Doping in MgB_2 : Role of Boron and Carbon p_x(y) Bands

Superconductivity in heavily boron-doped silicon carbide

Interstitial Boron Doping Effects on the Electronic and Magnetic Properties of Graphitic Carbon Nitride Materials