Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC

Measuring Near-Field Radiative Heat Transfer in a Graphene- <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant="normal">C</mml:mi></mml:mrow></mml:math> Heterostructure

Measuring Near-Field Radiative Heat Transfer in a Graphene-SiC Heterostructure

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Nano-infrared imaging of epitaxial graphene on SiC revealing doping and thickness inhomogeneities

Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Fabrication and Characterization of Graphene Derived from SiC

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Strong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC

Polarization-sensitive terahertz spectroscopy of graphene nanostructures

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Raman spectroscopy of epitaxial graphene on a SiC substrate

Epitaxial graphene on SiC(0001): More than just honeycombs

Uniaxial plasmon polaritons $\textit{via}$ charge transfer at the graphene/CrSBr interface

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Scaling and Reflection Behaviors of Polaritons in Low‐Dimensional Materials

Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers

Dirac Particles in Epitaxial Graphene Films Grown on SiC

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC