Abstract:The electron mobility and dark resistivity of Fe-doped semi-insulating GaN (GaN:Fe) are calculated over the temperature range from 10 K to 500 K by considering the impurities compensation mechanism and majority carrier scattering. The temperature characteristic curve of the mobility exhibits unimodality and the curve of resistivity decreases monotonically with rising temperature. The carrier scatterings induced by ionized impurities, acoustic deformation potential, piezoelectric, and polar optical phonons are analysed. It is found that the mobility is determined by ionized impurity scattering, piezoelectric scattering, and polar optical phonon scattering in different temperature ranges, and the contribution of acoustic deformation potential scattering is negligible over the entire temperature range. Furthermore, the effects of concentrations of shallow donors and deep acceptors on the temperature characteristic curves of mobility and resistivity, the peak mobility and its corresponding temperature (peak temperature), and the mobility and resistivity at room temperature are discussed. Our simulation shows the calculation results agree very well with the reported experimental and theoretical results when the Fe-related level is selected as 0.58 eV below the conduction band edge. Understanding of thermal properties of dark resistivity and mobility can be useful for optimizing GaN:Fe-based electronic and photonic devices performance in different temperature regimes.

Impurity Scattering Induced Excitonic Polariton Damping And Its Influence On The Reflectance Spectra Of Gan Epilayers

Can Interference Patterns in the Reflectance Spectra of Gan Epilayers Give Important Information of Carrier Concentration?

Impurity Effects on Photoluminescence in Lateral Epitaxially Overgrown Gan

Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer

Influence of GaN Polarity and Intermediate-Temperature Buffer Layers on Strain Relaxation and Defects

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

Infrared Spectrum of GaN1-xPx Ternary Alloy

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Low Energy Oscillatory Phenomena in Photoreflectance and Photo-Modulation Reflectance Spectra of Gamnas Films Grown by Low Temperature Molecular-Beam Epitaxy

STUDY OF LOW-FREQUENCY EXCESS NOISE IN Ga-POLARITY GaN EPITAXIAL LAYERS

Carrier Scattering and Temperature Characteristics of Mobility and Resistivity of Fe-Doped Gan

Infrared studies of GaN1-xPx ternary alloys

Interband Transition Physics from the Absorption Edge in GaN: New Prospects from Numerical Analysis

Study on the Carrier Concentration in N-Gaas Homojunction Multilayer Structures by Reflection Spectroscopy

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Thickness Dependence of Exciton and Polariton Spectra from ZnSe Films Grown on GaAs Substrates

Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities