Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga<sub>2</sub>O<sub>3</sub> Films on $(\overline{2}01)\ \beta$-Ga<sub>2</sub>O<sub>3</sub> by Laser Molecular Beam Epitaxy

Influence of Charged Dislocation on Mobility in Degenerate Homoepitaxial Si-Doped Ga 2 O 3 Films on $(\overline{2}01)\ \beta$ -Ga 2 O 3 by Laser Molecular Beam Epitaxy

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition

LPCVD Grown Si-Doped $β$-Ga$_2$O$_3$ Films with Promising Electron Mobilities

Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain

Homoepitaxial Si-doped Gallium Oxide films by MOCVD with tunable electron concentrations and electrical properties

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

Ultra High Hole Mobility in Ge Films Grown Directly on Si (1 0 0) Through Interface Modulation

Ultra high hole mobility in Ge films grown directly on Si (100) through interface modulation

High-mobility two-dimensional electron gas in $γ$-Al$_2$O$_3$/SrTiO$_3$ heterostructures

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$