Construction of FeN Alloy Films with Ultra-Strong Magnetism and Tunable Magnetic Anisotropy for Spintronic Application
Chun Feng,Jianjuan Yin,Jian-Gang Niu,Qinghua Zhang,Lin Gu,Feng Yang,Xiaolei Tang,Longxiang Xu,Kui Gong,Yi Cao,Meiyin Yang,Xiaopeng Cui,Shigenobu Ogata,Wen-Tong Geng,Guanghua Yu
DOI: https://doi.org/10.1016/j.jallcom.2017.07.127
IF: 6.2
2017-01-01
Journal of Alloys and Compounds
Abstract:FeN alloy film is a promising spintronic material with the theoretically ultra-strong magnetism (saturation magnetization MS and magnetic anisotropy K-eff) and high spin polarization, which relies on the degree of N ordering interstice occupancy (S). However, due to the high activation energy for N ordering, the S value of an actual FeN film is mostly lower than 35% and this restricts the achievable magnetism and transportation property. Thus, the construction of a FeN alloy film with well-controlled magnetism and efficient electronic transportation remains a long-standing challenge. Here, we tackle the problem by strain engineering. Using an Fe/Cr underlayer, we introduced a considerable epitaxial strain in the FeN lattice. The strain is proven to effectively promote the S value to over 60%, resulting in remarkable enhancement of MS value from 2.18T to 2.81T (30% increment) and effective tunability of K-eff value ranging 1.3 similar to 2.2 x 10(6) J/m(3). Besides, the matched energy band symmetry (Delta 5) between Cr and Fe16N2 facilitates the efficient electronic transportation for spintronic applications. By simulating interstice distribution with the first-principles calculations, the lattice strain is found to decrease the activation energy for N interstitial migration, which serves as a thermodynamic driving force for the magnetism tunability. (C) 2017 Elsevier B.V. All rights reserved.