Influence of Doping on Fe3+ Sensitive Films of Ge-Sb-Se-Fe(Ni)

Haifang Zhang,Piyi Du,Wenjian Weng,Gaorong Han
DOI: https://doi.org/10.3969/j.issn.1672-7126.2005.z1.015
2005-01-01
Abstract:Fe (or Ni) doped, Fe3+ sensitive films of Ge-Sb-Se-Fe(Ni) system, grown by electron beam evaporation, were characterized by field emission scanning electron microscopy (FSEM), and ultra-violet-visible (UV-Vis) spectroscopy to understand its morphology and properties. The results show that all films behave as p-type semiconductors, and that the electro-negativity of the transition metal dopants significantly affects microstructures of the film. For Instance, metal dopant with high electro-negativity results in fairly compact film with less structural defects. We found that thermal diffusion of Al, coated on glass substrate, into the films considerably increases charge carrier concentration, which, in turn, cancels out the decrease of mobility induced by impurity scattering and reduces sheet resistance of the films.
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