Growth of Fe3+ ion-sensitive Ge-Sb-Se-Fe film by vacuum deposition

HaiFang Zhang,Piyi Du,Wenjian Weng,Gaorong Han,Gaoling Zhao

2004-01-01

Abstract:Amorphous Fe3+ ion-sensitive Ge-Sb-Se-Fe thin films were grown by electron beam evaporation of Ge-Sb-Se-Fe target materials, sintered at a low temperature. Fe trace concentration in the film can be controlled by adding reduced iron powder in target fabrication. The morphology of the film was studied with X-ray diffraction (XRD). The results show that the Fe3+ ion sensitivity of the film can reach (50.375 ± 4.125) mV/decade, and the film responds linearly to the Fe3+ ion in its concentration ranging from 10-2 to 10-6 mol/L.