Investigation of Thin Film Sensor Prepared by Pulsed Laser Deposition Technique

MEN Hong,ZOU Shao-fang,WANG Ping,ANDRY Legin,SHEN Jing-qin,XU Zhu-an
DOI: https://doi.org/10.3785/j.issn.1008-973x.2005.04.031
2005-01-01
Abstract:FeGeSbSe chalcogenide glass was deposited on the surface of a light-addressable potentiometric sensor (LAPS) by means of pulsed laser beam deposition (PLD) technique. Chalcogenide glass Fe_(1.2)(Ge_(28)Sb_(12)Se_(40))_(98.8) was prepared and used as the target material. An additional contact layer of Cr/Au was deposited onto Si/SiO_2 substrate. Chalcogenide glass thin film had high sensitivity towards iron(Ⅲ)ion and exhibits a good stability, repetition and linear feature with slope of about (56±2) mV/decade in the range of iron(Ⅲ)concentration 1×10~(-5)~1×10~(-2) mol/L. The detection limit of the thin film sensor was 5×10~(-6) mol/L. The response time does not exceed 40 s for iron(Ⅲ)ion concentration higher than 1×10~(-4) mol/L, while the iron(Ⅲ)concentration is lower than the value, the response time is no more than 2 min.
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