Copper Ion Selective Galvanic Thin Film Sensor

MEN Hong,JIN Ji-yong,WANG Wei-guang,MU Sheng-wei,WANG Ping

DOI: https://doi.org/10.3969/j.issn.1004-1699.2008.01.006

2008-01-01

Abstract:Copper ion selective galvanic thin film sensor has been fabricated by means of pulsed laser deposition (PLD). The target material was copper ion selective electrode and the substratum is single crystal silicon of p type. The range of linearity of the thin film sensor is from 10-1 mol/L to 10-6 mol/L, the slope of calibration curve is 71 nA/decade, the limit of detection is 3.0×10-7 mol/L, the scope of pH application is 4 to 6 and the response time is less than 2 min. The thin film sensor shows good repetition and stability in the 12 weeks. The thin film sensor is excited by alternating current infrared light resource and the copper ion concentration is measured according to the electronic current amplitude in outside circuit. The detection limit of the thin film sensor is lower than the corresponding copper ion selective electrode’s and the sensitivity of thin film sensor improve 2.45 because the linearity slope is indicated by electronic current variable.