Growth of Mixed Phased Films of Γ-Fe2o3and Half Metallic Fe3O4using (100) MgO/Fe under Layer for Spin Electronic Devices

M. L. Wang,R. H. Yu,S. Nakagawa
DOI: https://doi.org/10.1088/1742-6596/266/1/012111
2011-01-01
Journal of Physics Conference Series
Abstract:Half metallic magnetite films using (100) MgO/Fe under layer deposited at room temperature were prepared using facing targets sputtering method. X-ray diffractometry and TEM analyses confirmed epitaxial growth of (100) oriented Fe3O4 layer on (100) oriented MgO under layer prepared on 5nm-thick Fe buffer layer on glass substrates. Resistivity analyses clarified that higher oxygen partial pressure caused higher oxidation of Fe ions in the films which tend to result in gamma-Fe2O3. Substrate heating is effective to improve crystallinity and magnetic properties of Fe3O4 film. Oxygen partial pressure of 7.5%, substrate temperature of 150 degrees C and sputtering discharge current of 0.45A was suitable to prepare magnetite Fe3O4 film with (100) preferential orientation and good magnetic properties.
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