Ambipolar Doping of Monolayer FeSe by Interface Engineering

Fang-Jun Cheng,Yi-Min Zhang,Jia-Qi Fan,Can-Li Song,Xu-Cun Ma,Qi-Kun Xue
DOI: https://doi.org/10.1088/0256-307x/40/8/086801
2023-01-01
Chinese Physics Letters
Abstract:We report on ambipolar modulation doping of monolayer FeSe epitaxial films grown by molecular beam epitaxy and in situ spectroscopic measurements via a cryogenic scanning tunneling microscopy.It is found that hole doping kills superconductivity in monolayer FeSe films on metallic Ir(001)substrates,whereas electron doping from polycrystalline IrO2/SrTiO3 substrate enhances significantly the superconductivity with an energy gap of 10.3 meV.By exploring substrate-dependent superconductivity,we elucidate the essential impact of substrate work functions on the superconductivity of monolayer FeSe films.Our results therefore offer a valuable reference guide for further enhancement of the transition temperature Tc in FeSe-based superconductors by interface engineering.
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