ChemInform Abstract: Ge1‐xMnx‐Diluted Magnetic Semiconductor Nanostructures for Spintronics

Yong Wang,Faxian Xiu,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1002/chin.201339206

2013-01-01

ChemInform

Abstract:AbstractReview: emphasis on the growth and structural properties of Ge:Mn thin films and quantm dots; 50 refs.

What problem does this paper attempt to address?

Magnetic Mn-Doped Ge Nanostructures

Faxian Xiu

DOI: https://doi.org/10.5402/2012/198590

2012-01-01

ISRN Condensed Matter Physics

Abstract:With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.
Ge1-X Mn-X-Diluted Magnetic Semiconductor Nanostructures for Spintronics

Yong Wang,Faxian Xiu,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1201/b12528-20

2012-01-01

ChemInform

Abstract:Figure 19.1 Schematic drawings of (a) a magnetic semiconductor, (b) a nonmagnetic semiconductor, and (c) a DMS. Reproduced from J. Phys.: Condens. Mat., 17, pp. R657-R689 (2005).
Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Tianxiao Nie,Jianshi Tang,Kang L. Wang

DOI: https://doi.org/10.1016/j.jcrysgro.2015.01.025

IF: 1.8

2015-01-01

Journal of Crystal Growth

Abstract:In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1−x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.
Mn-Rich Nanostructures Inge1-Xmnx: Fabrication, Microstructure, and Magnetic Properties

Ying Jiang,Yong Wang

DOI: https://doi.org/10.1155/2012/726921

IF: 2.0981

2012-01-01

Advances in Materials Science and Engineering

Abstract:Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS) system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainlyGe1-xMnx), which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magneticGe1-xMnxbulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.
Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Tianxiao Nie,Jianshi Tang,Xufeng Kou,Faxian Xiu,Kang L. Wang

DOI: https://doi.org/10.1016/b978-0-12-812136-8.00020-7

2018-01-01

Abstract:This chapter gives a systematic investigation of Mn thermal dynamics and kinetics in MnxGe1-x thin film growth. At high growth temperature, Mn preferred to agglomerate to form Mn5Ge3 intermetallic compound, whereas, the low growth temperature would induce Mn in the form of Mn-rich MnGe nanocolumn. Furthermore, through engineering of the strain in Ge space layer, MnGe/Ge superlattice can go through a structural transition from nanocolumn to nanodot, and finally to nanowell. To search for ideal diluted magnetic semiconductor (DMS) system, we focus our study on DMS nanostructures, including QDs, nanodisks and nanomeshes. Inside, not only high Tc (> 400 K) but also electric-field control of ferromagnetism can be realized. Based on this extraordinary property, a transpinor device is proposed, in which DMS nanostructures are used as the channel for collective spins switching controlled by gate voltage without need of current flow. And thus, it paves a new way for realizing low power-dissipation spin effect transistor.
Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

jin zou,yong wang,faxian xiu,zuoming zhao,k l wang

DOI: https://doi.org/10.1109/COMMAD.2012.6472336

2012-01-01

Abstract:In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.
(Invited) Growth of MnGe Nanostructures for Spintronics Applications

K. L. Wang,Faxian Xiu

DOI: https://doi.org/10.1149/1.3487537

2010-01-01

ECS Transactions

Abstract:Mainstream CMOS technology in today's electronics continues to scale down in the feature size. However, power dissipation per unit area and variability are among two major issues and challenges for the continuing scaling. Spintronics, as an emerging technology that exploits the intrinsic spin of the carriers, could potentially offer power savings, low variability and improved scalability. Using nanoscale materials makes possible heterogeneous integration of dissimilar materials by accommodation of strain and minimizing defects. In this paper, we present work on MnxGe1-x nanostructures. We discuss our nanoscale deposition and nano-epi approach in preparing single-crystalline dilute magnetic Mn0.05Ge0.95 QDs. By the use of MOS capacitor with the Mn0.05Ge0.95 QDs as the channel material and by controlling the electrical field at the gate, we demonstrate the ferromagnetism of the QDs by modulating the hole concentration in the channel. A theoretical understanding of high-Curie temperature nature of Mn0.05Ge0.95 is also provided via DOS simulations.
Magnetic MnxGe1-x Dots for Spintronics Applications

faxian xiu,yong wang,jin zou,k l wang

DOI: https://doi.org/10.5772/35922

2012-01-01

Abstract:Dilute magnetic semiconductors (DMSs) attract tremendous interest as emerging candidates for the microelectronics industry due to their uniqueness in exhibiting spin dependent magneto-electro-optical properties. Their distinctive material characteristics such as spin dependent coupling between semiconductor bands and the localized states promises magnetoelectric effect the modulation of magnetic properties by an applied electric field in semiconductors (Kulkarni et al., 2005, Ohno et al., 2000). Thus, a wide variety of semiconductor devices can be envisaged (Brunner, 2002a), such as spin polarized lightemitting diodes, lasers (Schulthess and Butler, 2001, Schilfgaarde and Mryasov, 2001) and spin transistor logic devices (Chen et al., 2005, Brunner, 2002b, Ohno et al., 2000). The development of these devices is considered as a possible route for extending the semiconductor scaling roadmap to spin-added electronics (Liu et al., 2005).
Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Shuming Ye,Junhong Lv,Dingzhang Wu,Shuailong Zhang,Dongsheng Peng,Niu Lai,Jie Yang,Yingwu Wang,Feng Lin,Shaoying Ke,Chong Wang

DOI: https://doi.org/10.1021/acsanm.4c02559

IF: 6.14

2024-01-01

ACS Applied Nano Materials

Abstract:MnxGe1-x quantum dots (QDs), with a high Curie temperature and superior magnetic properties, have significant application and research values for spintronic devices for high-density memory devices. However, the lattice mismatch between silicon and germanium leads to the formation of intermetallic precipitates, thereby constraining the utilization of MnxGe1-x QDs in spintronic device applications. In this work, we report the first preparation of Mn0.05Ge0.95 QDs/graphene heterostructures by ion beam cosputtering. Growth time-dependent QD density and formation of nanoislands were investigated systematically, indicating a transition of n-type to p-type conductivity in the sample with increasing deposition time, and high hole transport properties were observed in samples with quantum dots. A Curie temperature of 342 K observed in MnxGe1-x QDs is higher than room temperature. Circularly polarized light-induced spin currents and linearly polarized light-excited currents were confirmed in the QD samples. The relationship between circularly polarized light-induced spin current signals and incident angles was examined. Our research offers a cost-effective method to integrate MnxGe1-x low-dimensional materials with two-dimensional materials, achieving high Curie temperatures above room temperature along with favorable hole transport properties, thereby facilitating further studies on spintronic devices.
Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Sun Yu,Sun Zhi-Hu,Zhu San-Yuan,Shi Tong-Fei,Ye Jian,Pan Zhi-Yun,Liu Wen-Han,Wei Shi-Qiang

DOI: https://doi.org/10.7498/aps.56.5471

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:The structure of Mn-x Ge1-x dilute magnetic semiconductor thin films prepared by magnetron co-sputtering has been studied by X-ray diffraction (XRD) and X-ray absorption fine structure (XAFS) techniques. The XRD results show that in the Mn-x Ge1-x thin film with low Mn doping concentration (x = 0.070) only diffraction peaks attributed to crystalline Ge can be observed. In samples with high Mn doping concentrations ( x = 0.250, 0.360), the secondary phase Ge-3 Mn-5 appears, and its content enhances with Mn doping concentration. The XAFS results indicate that for the Mn-0.07 Ge-0.93 thin film, Mn atoms are mainly incorporated into the Ge lattice and located at the substitutional sites of Ge atoms with the ratio of 75%, while for the Mn-0.25 Ge-0.75 and Mn-0.36 Ge-0.64 samples, most of the Mn atoms are aggregated to form Ge-3 Mn-5.
Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

Ya Wang,Faxian Xiu,Yong Wang,Hongyi Xu,De Li,Xufeng Kou,Kang L. Wang,Ajey P. Jacob,Jin Zou

DOI: https://doi.org/10.1016/j.jcrysgro.2010.07.008

IF: 1.8

2010-01-01

Journal of Crystal Growth

Abstract:The nanostructures and magnetic properties of Ge1−xMnx thin films grown on Si substrates by molecular beam epitaxy, with different nominal Mn concentrations (1−4%) and different growth temperatures, have been systematically investigated by transmission electron microscopy and superconducting quantum interference device. It was discovered that when Ge1−xMnx thin films were grown at 70°C, with increase in Mn concentration, Mn-rich tadpole shaped clusters started to nucleate at 1% Mn and become dominate in the entire film at 4% Mn. While for the thin films grown at 150°C, tadpoles was firstly seen in the film with 1% Mn and subsequently Mn-rich secondary precipitates became dominant. The magnetic properties show specific features, which are mainly related to the nature and amount of Mn-rich clusters/precipitates within these thin films.
Manipulation of crystalline structure, magnetic performance, and topological feature in Mn 3 Ge films

Xiaolei Wang,Chen Zhang,Qianqian Yang,Lei Liu,Dong Pan,Xue Chen,Jinxiang Deng,Tianrui Zhai,Hui-Xiong Deng

DOI: https://doi.org/10.1063/5.0071093

IF: 6.6351

2021-11-01

APL Materials

Abstract:The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in material science. Here, we reported the controlled film growth of Heusler alloy Mn3Ge, which could crystallize in respective tetragonal and hexagonal structures. The tetragonal D022-type Mn3Ge film exhibits strong perpendicular ferromagnetic anisotropy, while the hexagonal D019-type Mn3Ge film indicates non-collinear triangular antiferromagnetic order. From our experimental observations of structure characterizations, magnetic properties, anomalous Hall effect, and magnetoresistance measurements, we realized the manipulation of spin orientations and topological features. Majority/minority spin polarized Fermi surface and density of states of both tetragonal and hexagonal Mn3Ge structures were investigated by density functional theory calculations. Our work not only opens up technology routes toward the development of Mn3X-based devices for applications in topological spintronics and spin-torque memories but also leads to engineer the physical properties for fundamental study.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Coherent magnetic semiconductor nanodot arrays

Yong Wang,Faxian Xiu,Ya Wang,Jin Zou,Ward P Beyermann,Yi Zhou,Kang L Wang

DOI: https://doi.org/10.1186/1556-276X-6-134

2011-01-01

Nanoscale Research Letters

Abstract:In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.
Tadpole Shaped Ge0.96Mn0.04 Magnetic Semiconductors Grown on Si

Yong Wang,Faxian Xiu,Jin Zou,Kang L. Wang,Ajey P. Jacob

DOI: https://doi.org/10.1063/1.3297880

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Magnetic and structural properties of a Ge0.96Mn0.04 thin film grown on Si has been investigated by transmission electron microscopy and superconducting quantum interference device. Tadpole shaped coherent GeMn clusters induced by spinodal decomposition were revealed in the film. Although these coherent clusters are dominant, Mn5Ge3 precipitates can be still detectable, contributing to a complex ferromagnetism. The Ge buffer layer, by relieving the misfit strain between Si and Ge, can significantly reduce the density of lattice defects in the subsequent GeMn layer. Our findings unveil a particular morphology of GeMn clusters, which would contribute to better understand the GeMn system.
Quest of Electric Field Controlled Spintronics in Mnge

Kang L. Wang,Faxian Xiu

DOI: https://doi.org/10.1016/j.tsf.2009.10.066

IF: 2.1

2010-01-01

Thin Solid Films

Abstract:With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next generation nanometric magneto-electronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor systems offers the magneto-electronic devices a potential for low power consumption and low variability. In this paper, we first review the current efforts on the development of Mn-doped Ge (MnGe) magnetic materials, followed by an analysis of MnGe thin films grown by molecular beam epitaxy. Then we show that with zero and one dimension quantum structures, superior magnetic properties of MnGe compared with bulk films can be obtained. More importantly, we demonstrate a field controlled ferromagnetism in these MnGe nanostructures at 50K. The controllability of ferromagnetism in this material system is a major step towards the Ge-based spintronic devices.
Mnxge1-X Dilute Magnetic Semiconductor Studied by Xafs

Jian Ye,Yong Jiang,Qinghua Liu,Yu Sun,Zhiyun Pan,Shiqiang Wei

DOI: https://doi.org/10.1088/1742-6596/190/1/012104

2009-01-01

Journal of Physics Conference Series

Abstract:Fluorescence X-ray absorption fine structure (XAFS) technique was used to investigate the local structures of the doped Mn in the MnxGe1-x dilute magnetic semiconductors (DMSs) with different Mn content (x= 0.07, 0.25, 0.36) prepared by magnetron cosputtering method. The results indicate that for the sample with low Mn content (x= 0.07), the Mn atoms are mainly incorporated into the lattice of Ge, and locate at the substitutional sites of Ge atoms with the ratio of 75%. With the Mn content increasing to 0.25 or higher, only part of Mn atoms enter the lattice of Ge and the others exist in the form of the Mn5Ge3 phase whose content increases with the doped Mn concentration. It is found that, in the Mn0.07Ge0.93 the bond length of the first (Mn-Ge) shell is RMn-Ge= 2.50 angstrom, which is bigger than the first (Ge-Ge) shell distance in Ge by about 0.05 angstrom. These results imply that local structure expansion is induced by dilute Mn substituting into Ge sites.
Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films

Sueyeong Kang,Matthieu Petit,Vasile Heresanu,Alexandre Altié,Thomas Beaujard,Ganaël Bon,Oscar Cespedes,Brian Hickey,Lisa Michez

2024-03-21

Abstract:Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn5(SixGe1-x)3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection highenergy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 {\mu}B/Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn5(SixGe1-x)3 compound.

Materials Science
MnGe Magnetic Nanocolumns and Nanowells.

Faxian Xiu,Yong Wang,Kin Wong,Yi Zhou,Xufeng Kou,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1088/0957-4484/21/25/255602

IF: 3.5

2010-01-01

Nanotechnology

Abstract:We report a 'superlattice' growth method to produce well-aligned magnetic MnGe nanocolumns and nanowells by using low-temperature molecular-beam epitaxy. Both structural and magnetic properties show strong evidence of Mn(5)Ge(3) precipitates and lattice-coherent nanostructures with different blocking temperatures. Magnetotransport measurements reveal positive and negative magnetoresistances for the nanowells and nanocolumns, respectively. This distinction can be explained by different spin scattering mechanisms under magnetic fields. Our results suggest a new growth strategy to achieve reproducible MnGe nanostructures, which facilitates the development of Ge-based spintronics and magnetoelectronics devices.
Voltage-controlled Ferromagnetic Order in MnGe Quantum Dots

Faxian Xiu,Igor V. Ovchinnikov,Pramey Upadhyaya,Kin Wong,Xufeng Kou,Yi Zhou,Kang L. Wang

DOI: https://doi.org/10.1088/0957-4484/21/37/375606

IF: 3.5

2010-01-01

Nanotechnology

Abstract:Here, we speculate that room temperature voltage-controlled ferromagnetic ordering may become a founding phenomenon for the next generation of low-power spintronics nanodevices and discuss the special role of dilute magnetic semiconductors as the most reliable material basis to date. Then, we report on our latest experimental achievements in the voltage manipulation of the ferromagnetism in MnGe quantum dots, experimentally demonstrating the capacity of pushing the Curie temperature further above room temperature for technological applications.
Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors

Xie Zili,Zhang Rong,Cui Xugao,Tao Zhikuo,Xiu Xiangqian,Liu Bin,Li Yi,Fu Deyi,Song Lihong,Cui Yingchao,Han Ping,Shi Yi

2008-01-01

Abstract:The Ga1-xMnxN DMS materials were grown on c-sapphire substrates by metalorganic chemical vapor deposition.Surface structure was characterized by atomic force microscopy and Mn as a surfactant was detected.Crystalline quality was measured by X-ray diffraction and Raman scattering.None of second phases were detected for these samples at low(<2.7%)Mn concentrations,but the second phases were observed when the Mn doping concentration was 3.9%.An emission band and an absorption band were detected by optical measurements methods.They are both attributed to some Mn-related levels.

ChemInform Abstract: Ge1‐xMnx‐Diluted Magnetic Semiconductor Nanostructures for Spintronics

Magnetic Mn-Doped Ge Nanostructures

Ge1-X Mn-X-Diluted Magnetic Semiconductor Nanostructures for Spintronics

Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Mn-Rich Nanostructures Inge1-Xmnx: Fabrication, Microstructure, and Magnetic Properties

Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Structural characteristics of GeMn diluted magnetic semiconductor nanostructures

(Invited) Growth of MnGe Nanostructures for Spintronics Applications

Magnetic MnxGe1-x Dots for Spintronics Applications

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

Manipulation of crystalline structure, magnetic performance, and topological feature in Mn 3 Ge films

Coherent magnetic semiconductor nanodot arrays

Tadpole Shaped Ge0.96Mn0.04 Magnetic Semiconductors Grown on Si

Quest of Electric Field Controlled Spintronics in Mnge

Mnxge1-X Dilute Magnetic Semiconductor Studied by Xafs

Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films

MnGe Magnetic Nanocolumns and Nanowells.

Voltage-controlled Ferromagnetic Order in MnGe Quantum Dots

Study on the Fabrication and Properties of GaN-Based Diluted Magnetic Semiconductors