Ge1-X Mn-X-Diluted Magnetic Semiconductor Nanostructures for Spintronics

Yong Wang,Faxian Xiu,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1201/b12528-20

2012-01-01

ChemInform

Abstract:Figure 19.1 Schematic drawings of (a) a magnetic semiconductor, (b) a nonmagnetic semiconductor, and (c) a DMS. Reproduced from J. Phys.: Condens. Mat., 17, pp. R657-R689 (2005).

What problem does this paper attempt to address?

ChemInform Abstract: Ge1‐xMnx‐Diluted Magnetic Semiconductor Nanostructures for Spintronics

Yong Wang,Faxian Xiu,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1002/chin.201339206

2013-01-01

ChemInform

Abstract:AbstractReview: emphasis on the growth and structural properties of Ge:Mn thin films and quantm dots; 50 refs.
Magnetic MnxGe1-x Dots for Spintronics Applications

faxian xiu,yong wang,jin zou,k l wang

DOI: https://doi.org/10.5772/35922

2012-01-01

Abstract:Dilute magnetic semiconductors (DMSs) attract tremendous interest as emerging candidates for the microelectronics industry due to their uniqueness in exhibiting spin dependent magneto-electro-optical properties. Their distinctive material characteristics such as spin dependent coupling between semiconductor bands and the localized states promises magnetoelectric effect the modulation of magnetic properties by an applied electric field in semiconductors (Kulkarni et al., 2005, Ohno et al., 2000). Thus, a wide variety of semiconductor devices can be envisaged (Brunner, 2002a), such as spin polarized lightemitting diodes, lasers (Schulthess and Butler, 2001, Schilfgaarde and Mryasov, 2001) and spin transistor logic devices (Chen et al., 2005, Brunner, 2002b, Ohno et al., 2000). The development of these devices is considered as a possible route for extending the semiconductor scaling roadmap to spin-added electronics (Liu et al., 2005).
Magnetic Mn-Doped Ge Nanostructures

Faxian Xiu

DOI: https://doi.org/10.5402/2012/198590

2012-01-01

ISRN Condensed Matter Physics

Abstract:With the seemly limit of scaling on CMOS microelectronics fast approaching, spintronics has received enormous attention as it promises next-generation nanometric magnetoelectronic devices; particularly, the electric field control of ferromagnetic transition in dilute magnetic semiconductor (DMS) systems offers the magnetoelectronic devices a potential for low power consumption and low variability. Special attention has been given to technologically important group IV semiconductor based DMSs, with a prominent position for Mn doped Ge. In this paper, we will first review the current theoretical understanding on the ferromagnetism in MnxGe1−x DMS, pointing out the possible physics models underlying the complicated ferromagnetic behavior of MnxGe1−x. Then we carry out detailed analysis of MnxGe1−x thin films and nanostructures grown by molecular beam epitaxy. We show that with zero and one dimension quantum structures, superior magnetic properties of MnxGe1−x compared with bulk films can be obtained. More importantly, with MnxGe1−x nanostructures, such as quantum dots, we demonstrate a field controlled ferromagnetism up to 100 K. Finally we provide a prospective of the future development of ferromagnetic field effect transistors and magnetic tunneling junctions/memories using dilute and metallic MnxGe1−x dots, respectively. We also point out the bottleneck problems in these fields and rendering possible solutions to realize practical spintronic devices.
Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Tianxiao Nie,Jianshi Tang,Xufeng Kou,Faxian Xiu,Kang L. Wang

DOI: https://doi.org/10.1016/b978-0-12-812136-8.00020-7

2018-01-01

Abstract:This chapter gives a systematic investigation of Mn thermal dynamics and kinetics in MnxGe1-x thin film growth. At high growth temperature, Mn preferred to agglomerate to form Mn5Ge3 intermetallic compound, whereas, the low growth temperature would induce Mn in the form of Mn-rich MnGe nanocolumn. Furthermore, through engineering of the strain in Ge space layer, MnGe/Ge superlattice can go through a structural transition from nanocolumn to nanodot, and finally to nanowell. To search for ideal diluted magnetic semiconductor (DMS) system, we focus our study on DMS nanostructures, including QDs, nanodisks and nanomeshes. Inside, not only high Tc (> 400 K) but also electric-field control of ferromagnetism can be realized. Based on this extraordinary property, a transpinor device is proposed, in which DMS nanostructures are used as the channel for collective spins switching controlled by gate voltage without need of current flow. And thus, it paves a new way for realizing low power-dissipation spin effect transistor.
Mn-Rich Nanostructures Inge1-Xmnx: Fabrication, Microstructure, and Magnetic Properties

Ying Jiang,Yong Wang

DOI: https://doi.org/10.1155/2012/726921

IF: 2.0981

2012-01-01

Advances in Materials Science and Engineering

Abstract:Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS) system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainlyGe1-xMnx), which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magneticGe1-xMnxbulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.
Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Tianxiao Nie,Jianshi Tang,Kang L. Wang

DOI: https://doi.org/10.1016/j.jcrysgro.2015.01.025

IF: 1.8

2015-01-01

Journal of Crystal Growth

Abstract:In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1−x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.
Advanced Tetrahedrally-Bonded Magnetic Semiconductors for Spintronic Applications

AJ Freeman,YJ Zhao

DOI: https://doi.org/10.1016/s0022-3697(03)00120-3

IF: 4.383

2003-01-01

Journal of Physics and Chemistry of Solids

Abstract:Recent developments of magnetic semiconductors suggest the possibility of harnessing the spin of the electron —in addition to its charge—for future devices and some examples are given here. Highly precise FLAPW calculations demonstrate that: (i) Cd1−xMnxGeP2 chalcopyrites are antiferromagnetically (AFM) favored but will undergo a phase transition to the FM state with n-type S doping. Hence, the magnetic moments (mm) may be tuned with impurities, and a great boon for technological applications; (ii) a new class of half-metallic ferromagnetic semiconductors in Mn doped I–III–VI2 chalcopyrites is predicted with the Curie temperature TC proportional to the hole concentration. Moreover, we investigated the electronic and magnetic properties of MnxGe1−x as a function of Mn positions in a 64 atom supercell. The FM aligned Mn at a distance of a2 has the lowest energy, followed by several energetically competitive FM and AFM configurations, explaining the observation of ‘inactive’ Mn mm, and the theoretical mm of 3.0μB per Mn for the FM states. Surprisingly, the exchange interaction between a Mn pair is found to oscillate with the distance between them, and to obey the RKKY analytic formula. In addition, the estimated TC, around 134–400 K, is in good agreement with experiment.
Spin-Dependent Optical Processes in II-VI Diluted Magnetic Semiconductor Nanostructures

Oka Yasuo,Kayanuma Kentaro,Sakuma Mio,Uetake Ayahito,Souma Izura,Chen Zhanghai,Murayama Akihiro

DOI: https://doi.org/10.1557/PROC-799-Z9.1

2004-01-01

Abstract:Nanostructures of diluted magnetic semiconductors have potential possibility for the spin electronics application due to their large magneto-optical effects and the quantum confinement effects for band electrons. We have fabricated quantum wells and quantum dots by II–VI diluted magnetic semiconductors of Cd1−xMnxTe, Zn1−xMnxTe and Zn1−x−yCdyMnxSe. These nanostructures showed spin injection, spin switching and ultrafast spin relaxation processes derived in the confined nanostructures. Hybrid structures consisting of diluted magnetic semiconductor and Co showed Mn spin polarizations induced by the Co wire shape.
Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Yong Jiang,Wensheng Yan,Zhihu Sun,Qinghua Liu,Zhiyun Pan,Tao Yao,Yuanyuan Li,Zemin Qi,Guobin Zhang,Pengshou Xu,Ziyu Wu,Shiqiang Wei

DOI: https://doi.org/10.1088/1742-6596/190/1/012100

2009-01-01

Abstract:X-ray absorption fine structure (XAFS) and first-principles calculations are effectively combined to establish correlations of fabrications, atomic and electronic structures as well as ferromagnetism for the Mn-doped dilute magnetic semiconductors (DMS), and to shed light on the magnetism origin for a variety of ZnO-, GaN-, and Si-based DMSs. The results of Mn: ZnO and (Mn, N): ZnO thin films reveal that either the existence of Zn vacancy or N substitution of O sites can stabilize the ferromagnetic interactions between neighboring MnMn pairs, and enhance the magnetic moment per Mn. In a 2.5at.% Mn-doped GaN film, a part of substantial Mn ions is found to locate at the interstitial sites near the substitutional Mn ions, forming Mn-Mn dimers that possess unique electronic and magnetic properties. Similar phenomena have also been found in the Mn-doped Si system in which the interstitial Mn atoms intend to assemble together via an intervening substitutional Mn ion. We have proposed a pathway to understand the microscopic origin of ferromagnetism in the DMS materials from the viewpoint of experimental determination and theoretical calculations.
Diluted Magnetic Semiconductors--bridging Spin and Charge

常凯,夏建白

DOI: https://doi.org/10.3321/j.issn:0379-4148.2004.06.006

2004-01-01

Abstract:Diluted magnetic semiconductors could be used to construct magnetic and electronic device that utilize simultaneously the spin and charge degrees of freedom of carrier. Recent research on ferromagnetic semiconductors has stimulates the development of spintronics. The fabrication of room-temperature ferromagnetic semiconductors, high-efficiency spin injection, and spin manipulation and transport in semiconductors have attracted considerable interest in the past few years. Diluted magnetic semiconductors exhibit strong spin-dependent optical and transport properties, and these effects provide a physical basis for semiconductor spintronics devices.
Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Jianshi Tang,Tianxiao Nie,Kang L. Wang

DOI: https://doi.org/10.1149/06406.0613ecst

2014-01-01

Abstract:Spintronic devices, in particular spin field-effect transistors (spinFETs), have been researched for decades as a promising candidate to replace Si transistors with potentially low power dissipation and low variability. In this paper, we propose a nonvolatile spin-base transistor (transpinor) based on diluted magnetic semiconductor (DMS) with electric field-controlled paramagnetism-to-ferromagnetism phase transition. To realize the transpinor, we demonstrate the electrical spin injection into Ge nanowires using both ferromagnetic Mn 5 Ge 3 Schottky contacts and Fe/MgO tunnel junctions. We observe much longer spin lifetimes and diffusion lengths in Ge nanowires compared with bulk Ge. Furthermore, we successfully grow the single-crystalline Mn x Ge 1-x DMS nanowires using pattern-assisted molecular beam epitaxy (MBE). The Mn x Ge 1-x nanowires exhibit a Curie temperature above 400 K, and the ferromagnetism can be further modulated by an external gate voltage. The demonstrated electric field-controlled ferromagnetism, along with the successful spin injection into Ge nanowires, paves the road to build the proposed transpinor.
Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Shuming Ye,Junhong Lv,Dingzhang Wu,Shuailong Zhang,Dongsheng Peng,Niu Lai,Jie Yang,Yingwu Wang,Feng Lin,Shaoying Ke,Chong Wang

DOI: https://doi.org/10.1021/acsanm.4c02559

IF: 6.14

2024-01-01

ACS Applied Nano Materials

Abstract:MnxGe1-x quantum dots (QDs), with a high Curie temperature and superior magnetic properties, have significant application and research values for spintronic devices for high-density memory devices. However, the lattice mismatch between silicon and germanium leads to the formation of intermetallic precipitates, thereby constraining the utilization of MnxGe1-x QDs in spintronic device applications. In this work, we report the first preparation of Mn0.05Ge0.95 QDs/graphene heterostructures by ion beam cosputtering. Growth time-dependent QD density and formation of nanoislands were investigated systematically, indicating a transition of n-type to p-type conductivity in the sample with increasing deposition time, and high hole transport properties were observed in samples with quantum dots. A Curie temperature of 342 K observed in MnxGe1-x QDs is higher than room temperature. Circularly polarized light-induced spin currents and linearly polarized light-excited currents were confirmed in the QD samples. The relationship between circularly polarized light-induced spin current signals and incident angles was examined. Our research offers a cost-effective method to integrate MnxGe1-x low-dimensional materials with two-dimensional materials, achieving high Curie temperatures above room temperature along with favorable hole transport properties, thereby facilitating further studies on spintronic devices.
Recent Development of SiC-Based Diluted Magnetic Semiconductors Materials

Jin Chenggang,Wu Xuemei,Zhuge Lanjian

DOI: https://doi.org/10.3969/j.issn.1671-4776.2007.12.005

2007-01-01

Abstract:Diluted magnetic semiconductors(DMS) are expected to play an important role in material science and future spintronics.The charge and spin of electrons are accommodated into a single matter,resulting in excellent magnetism,magneto-optical characteristic,magnetoelectricity and other properties.Recent progress of SiC-based diluted magnetic semiconductors was briefly introduced.The preparation methods,configuration,properties,and the ferromagnetism origin mechanism of the materials and the potential applications of the device were described,with the focus on the structure of the materials and the magnetic mechanism.
Coherent magnetic semiconductor nanodot arrays

Yong Wang,Faxian Xiu,Ya Wang,Jin Zou,Ward P Beyermann,Yi Zhou,Kang L Wang

DOI: https://doi.org/10.1186/1556-276X-6-134

2011-01-01

Nanoscale Research Letters

Abstract:In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.
Spin Transport in Diluted Magnetic Semiconductors

Y. W. Du,F. M. Zhang,D. Wu,S. J. Xiong

DOI: https://doi.org/10.1109/inec.2010.5424472

2010-01-01

Abstract:Some research works of magnetic properties and transport properties on DMSs (diluted magnetic semiconductors) in our group have been presented.
Zno-Based Nanostructures For Diluted Magnetic Semiconductor

millaty mustaqima,chunli liu

DOI: https://doi.org/10.3906/fiz-1405-17

2014-01-01

TURKISH JOURNAL OF PHYSICS

Abstract:Since the prediction by Dietl et al. in the year 2000, extensive research activities have been focused on the ZnO-based diluted magnetic materials (DMSs). Earlier works were mainly performed using bulk or thin film materials with transition-metal doping, and diverse magnetic properties including ferromagnetism, paramagnetism, and diamagnetism have been reported. Identifying the dominant mechanism of the ferromagnetic ordering and realizing reproducible ferromagnetism above room temperature have been the main research issues, but a consensus is still lacking even today. Recently, reports on ZnO nanostructures with ferromagnetic behavior have been growing due to the novel properties brought about by the high surface-to-volume ratio and surfaces rich in defect states. In this review, we focus primarily on the recent progress in experimental studies of nanostructure ZnO DMSs. We shall separate our discussion into 2 categories as Mn- and Co-doped ZnO and undoped ZnO nanostructures reported in the literature.
(Invited) Growth of MnGe Nanostructures for Spintronics Applications

K. L. Wang,Faxian Xiu

DOI: https://doi.org/10.1149/1.3487537

2010-01-01

ECS Transactions

Abstract:Mainstream CMOS technology in today's electronics continues to scale down in the feature size. However, power dissipation per unit area and variability are among two major issues and challenges for the continuing scaling. Spintronics, as an emerging technology that exploits the intrinsic spin of the carriers, could potentially offer power savings, low variability and improved scalability. Using nanoscale materials makes possible heterogeneous integration of dissimilar materials by accommodation of strain and minimizing defects. In this paper, we present work on MnxGe1-x nanostructures. We discuss our nanoscale deposition and nano-epi approach in preparing single-crystalline dilute magnetic Mn0.05Ge0.95 QDs. By the use of MOS capacitor with the Mn0.05Ge0.95 QDs as the channel material and by controlling the electrical field at the gate, we demonstrate the ferromagnetism of the QDs by modulating the hole concentration in the channel. A theoretical understanding of high-Curie temperature nature of Mn0.05Ge0.95 is also provided via DOS simulations.
Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Sun Yu,Sun Zhi-Hu,Zhu San-Yuan,Shi Tong-Fei,Ye Jian,Pan Zhi-Yun,Liu Wen-Han,Wei Shi-Qiang

DOI: https://doi.org/10.7498/aps.56.5471

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:The structure of Mn-x Ge1-x dilute magnetic semiconductor thin films prepared by magnetron co-sputtering has been studied by X-ray diffraction (XRD) and X-ray absorption fine structure (XAFS) techniques. The XRD results show that in the Mn-x Ge1-x thin film with low Mn doping concentration (x = 0.070) only diffraction peaks attributed to crystalline Ge can be observed. In samples with high Mn doping concentrations ( x = 0.250, 0.360), the secondary phase Ge-3 Mn-5 appears, and its content enhances with Mn doping concentration. The XAFS results indicate that for the Mn-0.07 Ge-0.93 thin film, Mn atoms are mainly incorporated into the Ge lattice and located at the substitutional sites of Ge atoms with the ratio of 75%, while for the Mn-0.25 Ge-0.75 and Mn-0.36 Ge-0.64 samples, most of the Mn atoms are aggregated to form Ge-3 Mn-5.
Fabrication and Magnetic Property of Mn Doped ZnO Nanowires

Chang Yongqin,Yu Dapeng,Long Yi

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.z1.075

2016-01-01

Abstract:Diluted magnetic semiconductor is an ideal system for the research of spintronics.In the present work，high crystal quality Zn1-xMnxO nanowires were synthesized via an in situ doped method. The content of manganese can be controlled by adjusting the growth condition. The XRD，XPS and HRTEM results exhibit that Mn ions indeed doped into ZnO lattices.The magnetic measurements show that the magnetic property of Zn1-xMnxO nanowires relates to the content of Mn.
Diluted Magnetic Semiconductor Nanocrystals

Gong Cheng,Qinglin Yang,Tianhao Ji

DOI: https://doi.org/10.3969/j.issn.0441-3776.2006.08.004

2006-01-01

Abstract:Diluted magnetic semiconductor nanocrystals (DMS NCs) are the type of special materials with optical, electronic, magnetic and nano-effects and have potential application in devices. In this paper, on the basis of recent research works for DMS NCs, especially the doped materials of Ⅱ-Ⅳ, Ⅲ-Ⅴ or Ⅳ-VI groups, their preparation methods and optical, electronic or magnetic properties as well as the relationship between doping ability and structure have been introduced.

Ge1-X Mn-X-Diluted Magnetic Semiconductor Nanostructures for Spintronics

ChemInform Abstract: Ge1‐xMnx‐Diluted Magnetic Semiconductor Nanostructures for Spintronics

Magnetic MnxGe1-x Dots for Spintronics Applications

Magnetic Mn-Doped Ge Nanostructures

Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

Mn-Rich Nanostructures Inge1-Xmnx: Fabrication, Microstructure, and Magnetic Properties

Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Advanced Tetrahedrally-Bonded Magnetic Semiconductors for Spintronic Applications

Spin-Dependent Optical Processes in II-VI Diluted Magnetic Semiconductor Nanostructures

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors

Diluted Magnetic Semiconductors--bridging Spin and Charge

Spin Transport in Ge Nanowires for Diluted Magnetic Semiconductor-Based Nonvolatile Transpinor

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Recent Development of SiC-Based Diluted Magnetic Semiconductors Materials

Coherent magnetic semiconductor nanodot arrays

Spin Transport in Diluted Magnetic Semiconductors

Zno-Based Nanostructures For Diluted Magnetic Semiconductor

(Invited) Growth of MnGe Nanostructures for Spintronics Applications

Structure of Mnxge1-X Dilute Magnetic Semiconductor Films

Fabrication and Magnetic Property of Mn Doped ZnO Nanowires

Diluted Magnetic Semiconductor Nanocrystals