Spin Transport in Diluted Magnetic Semiconductors

Y. W. Du,F. M. Zhang,D. Wu,S. J. Xiong

DOI: https://doi.org/10.1109/inec.2010.5424472

2010-01-01

Abstract:Some research works of magnetic properties and transport properties on DMSs (diluted magnetic semiconductors) in our group have been presented.

What problem does this paper attempt to address?

Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory

E. H. Hwang,S. Das Sarma

DOI: https://doi.org/10.1103/PhysRevB.72.035210

2005-03-04

Abstract:The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly parameter dependent such as temperature, doping, density of the carriers, and the strength of the carrier-local impurity spin exchange coupling. Characteristic qualitative features are found distinguishing weak, intermediate, and strong carrier-spin coupling and allowing quantitative determination of important parameters defining the underlying ferromagnetic mechanism. We find that spin-disorder scattering, formation of bound state, and the population of the minority spin band are all operational in DMFT in different parameter range. We also develop a complementary Boltzmann transport theory for scattering by screened ionized impurities. The difference in the screening properties between paramagnetic ($T>T_c$) and ferromagnetic ($T<T_c$) states gives rise to the temperature dependence (increase or decrease) of resistivity, depending on the carrier density, as the system goes from the paramagnetic phase to the ferromagnetic phase. The metallic behavior below $T_c$ for optimally doped DMS samples can be explained in the Boltzmann theory by temperature dependent screening and thermal change of carrier spin polarization.

Materials Science,Disordered Systems and Neural Networks
Spin-Dependent Transport in Diluted-Magnetic-Semiconductor/Semiconductor Quantum Wires

Wen Xu,Yong Guo

DOI: https://doi.org/10.1063/1.2219336

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:Spin-polarized transport properties have been investigated in diluted-magnetic-semiconductor/semiconductor quantum wires. We stress the effects introduced by the structural configuration and geometric parameters as well as the external magnetic field. It is found that the symmetric quantum wire shows quite different spin-dependent transport characteristics from the asymmetric one. It is also found that the spin-up component of the conductance can be considerably suppressed when the magnetic field is large enough, and thus nearly 100% spin polarization can be obtained in such kind of quantum wire. Moreover, one can effectively modulate the spin-dependent conductance in the quantum wire structure by varying the geometric parameters and the Fermi energy. (c) 2006 American Institute of Physics.
Diluted Magnetic Semiconductors in the Low Carrier Density Regime

R. N. Bhatt,Mona Berciu,Malcolm P. Kennett,Xin Wan

DOI: https://doi.org/10.1023/A:1014031327996

2002-01-01

Journal of Superconductivity

Abstract:This paper, based on a presentation at the Spintronics 2001 conference, provides a review of our studies on II–VI and III–V Mn-doped Diluted Magnetic Semiconductors. We use simple models appropriate for the low carrier density (insulating) regime, although we believe that some of the unusual features of the magnetization curves should qualitatively be present at larger dopings (metallic regime) as well. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also found to enhance the ferromagnetic transition temperature. Unusual spin and charge transport is implied.
Diluted Magnetic Semiconductors--bridging Spin and Charge

常凯,夏建白

DOI: https://doi.org/10.3321/j.issn:0379-4148.2004.06.006

2004-01-01

Abstract:Diluted magnetic semiconductors could be used to construct magnetic and electronic device that utilize simultaneously the spin and charge degrees of freedom of carrier. Recent research on ferromagnetic semiconductors has stimulates the development of spintronics. The fabrication of room-temperature ferromagnetic semiconductors, high-efficiency spin injection, and spin manipulation and transport in semiconductors have attracted considerable interest in the past few years. Diluted magnetic semiconductors exhibit strong spin-dependent optical and transport properties, and these effects provide a physical basis for semiconductor spintronics devices.
Spin-Polarized Transport in A Lateral Two-Dimensional Diluted Magnetic Semiconductor Electron Gas

W Yang,K Chang,XG Wu,HZ Zheng

DOI: https://doi.org/10.1063/1.2177373

IF: 4

2006-01-01

Applied Physics Letters

Abstract:The transport property of a lateral two-dimensional paramagnetic diluted magnetic semiconductor electron gas under a spatially periodic magnetic field is investigated theoretically. We find that the electron Fermi velocity along the modulation direction is highly spin dependent even if the spin polarization of the carrier population is negligibly small. It turns out that this spin-polarized Fermi velocity alone can lead to a strong spin polarization of the current, which is still robust against the energy broadening effect induced by the impurity scattering. (c) 2006 American Institute of Physics.
Spin transport in quantum dot embedded in Aharonov–Bohm ring

J.S. Wei,R.Z. Wang,R.Y. Yuan,J.Q. You,H. Yan

DOI: https://doi.org/10.1016/j.physleta.2005.07.024

IF: 2.707

2005-01-01

Physics Letters A

Abstract:Spin polarized transport was studied by employing non-equilibrium Green function method, for a model of quantum dot (QD) embedded in a mesoscopic Aharonov–Bohm (AB) ring with magnetic field applied on QD. In comparison with the situation without magnetic field on QD, the average spin occupations separate with the increase in applied magnetic field on QD; in addition, magnetic field on QD has profound effect on the density of states for different spins in QD; on the other hand, the amplitude and phase of transmission for up spin and down spin were found to present novel effects, such as, the additional peak in the phase of transmission. To understand the spin transport in the system of QD coupled to AB ring, the effects of the two magnetic fields imposed on the QD and penetrating the AB ring should be considered.
Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Yang Liu,Yuqiao Guo,Changzheng Wu,Yi Xie

DOI: https://doi.org/10.1021/acs.jpclett.1c02047

2021-01-01

Abstract:Spintronics is a promising alternative to the conventional silicon transistor-based electronics that are gradually approaching their physical limitations. Ultrathin two-dimensional van der Waals (vdW) materials (2D materials) with controllable spin degrees of freedom are recognized as extremely promising spintronic materials in architectures for the post-Moore era. In this Perspective, we review recent progress on spin-dependent transport behaviors (SDTBs) confined at the 2D scale, which are the mainstream paradigms for spintronic devices. We first present the mechanism and the key factors of SDTBs in 2D nonmagnetic materials-based hybrid devices. Then, some chemical modulation strategies for inducing short-range magnetic order and magneto-electric performance into 2D nonmagnetic materials are discussed. Furthermore, we concentrate on introducing intriguing SDTBs in 2D long-range ferromagnetic materials-based vdW devices. Finally, we highlight the current challenges in the study of spin-dependent transport of 2D modified materials and 2D material-based spintronic devices, in the hope of accelerating their applications.
Spin-polarized Transport of Two-Dimensional Electron Gas Embedded in a Diluted Magnetic Semiconductor

W Yang,K Chang,FM Peeters

DOI: https://doi.org/10.1063/1.1927693

IF: 4

2005-01-01

Applied Physics Letters

Abstract:The spin-polarized transport property of a diluted magnetic semiconductor two-dimensional electron gas is investigated theoretically at low temperature. A large current polarization can be found in this system even at small magnetic fields and oscillates with increasing magnetic field while the carrier polarization is vanishingly small. The magnitude as well as the sign of the current polarization can be tuned by varying magnetic field, the electron density and the Mn concentration.
Spin Transport in the heterogeneous structure containing Topological Insulator and Diluted Magnetic Semiconductor

Myong Chol Pak,Kwang-Il Kim,Hak Chol Pak,Chol Won Ri,Sang Jun Cha

DOI: https://doi.org/10.48550/arXiv.1209.2481

2020-11-28

Abstract:In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes according to the electric field and Fermi energy were investigated. The higher electric field, the stronger spin injection efficiency, and its velocity of increase gets lower and approaches to the equilibrium state. Additionally, the higher interface conductivity, the weaker spin injection efficiency, and the transmission due to Fermi energy of spin up and spin down is different from each other. In the same structure, the spin injection efficiency changes depending on the magnetic field, and the spin injection efficiency vibrates sensitively according to the magnetic field. In TI / DMS heterogeneous structure, the spin current changes according to magnetic field were investigated. Here, when the magnetic field is low, the spin current oscillates, and as the magnetic field increases, the vibration is attenuated. It also decreases with increasing temperature and weakens vibrations. This is due to the competitive effect of the chiral properties of Dirac type quasiparticles in the topological insulator and the unique properties of exchange interaction between electrons and ions in DMS. This result allows us to expect the possibility of spintronic devices with high sensitivity to magnetic field.

Mesoscale and Nanoscale Physics,Materials Science
Ge1-X Mn-X-Diluted Magnetic Semiconductor Nanostructures for Spintronics

Yong Wang,Faxian Xiu,Jin Zou,Kang L. Wang

DOI: https://doi.org/10.1201/b12528-20

2012-01-01

ChemInform

Abstract:Figure 19.1 Schematic drawings of (a) a magnetic semiconductor, (b) a nonmagnetic semiconductor, and (c) a DMS. Reproduced from J. Phys.: Condens. Mat., 17, pp. R657-R689 (2005).
Exchange anisotropy effects on ferromagnetism in diluted, magnetic semiconductors

Chenggang Zhou,M.P. Kennett,X. Wan,M. Berciu,R.N. Bhatt

DOI: https://doi.org/10.1016/j.jmmm.2003.12.795

IF: 3.097

2004-01-01

Journal of Magnetism and Magnetic Materials

Abstract:We investigate the interplay of exchange anisotropy and positional disorder on the magnetic properties of diluted magnetic semiconductors (DMS). We find that the anisotropic spin exchange interactions arising from spin-orbit coupling do not lead to a large suppression of the ferromagnetism at low temperatures unless the anisotropy is very strong. This suggests that such effects observed in experiments are more likely to be due to antiferromagnetic exchange interactions or magnetically inert dopants. (C) 2003 Elsevier B.V. All rights reserved.
Spin-Dependent Transport and Densities of States in Non-collinear Magnetic Barriers

Jiang Li-Xia,Zhao Xue-An,Lai Huan-Wen,Lu Ding-Hui

DOI: https://doi.org/10.1088/0253-6102/46/5/035

2006-01-01

Abstract:The spin-dependent transport properties in the non-collinear pattern of series of S-magnetic barriers are studied by using scattering theory and Green's function methods. The Green's function is obtained by using distorted wave approach and the scattering matrix is related by Fisher-Lee relationship. In addition to reproducing the results of Papp's and Xu's in parallel and antiparallel configurations, we also obtain further results, where arbitrary orientations of the magnetic barriers and arbitrary number of barriers are included. The main finding of our results is that the signs of polarizations can be switched around some "geometric unpolarized windows". The well-known antiparallel configuration has no such characteristics. Furthermore, we discuss spin-related partial densities of states in both polarized and unpolarized structures.
Magnetic MnxGe1-x Dots for Spintronics Applications

faxian xiu,yong wang,jin zou,k l wang

DOI: https://doi.org/10.5772/35922

2012-01-01

Abstract:Dilute magnetic semiconductors (DMSs) attract tremendous interest as emerging candidates for the microelectronics industry due to their uniqueness in exhibiting spin dependent magneto-electro-optical properties. Their distinctive material characteristics such as spin dependent coupling between semiconductor bands and the localized states promises magnetoelectric effect the modulation of magnetic properties by an applied electric field in semiconductors (Kulkarni et al., 2005, Ohno et al., 2000). Thus, a wide variety of semiconductor devices can be envisaged (Brunner, 2002a), such as spin polarized lightemitting diodes, lasers (Schulthess and Butler, 2001, Schilfgaarde and Mryasov, 2001) and spin transistor logic devices (Chen et al., 2005, Brunner, 2002b, Ohno et al., 2000). The development of these devices is considered as a possible route for extending the semiconductor scaling roadmap to spin-added electronics (Liu et al., 2005).
Spin-Dependent Transport Through Cd1-Xmnxte Diluted Magnetic Semiconductor Quantum Dots

SS Li,K Chang,JB Xia,K Hirose

DOI: https://doi.org/10.1103/physrevb.68.245306

IF: 3.7

2003-01-01

Physical Review B

Abstract:We theoretically investigate the spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor (DMS) quantum dots (QD's) under the influence of both the external electric field and magnetic field using the recursion method. Our results show that (1) it can get a 100% polarized electric current by using suitable structure parameters; (2) for a fixed Cd1-xMnxTe DMS QD, the wider the system is, the more quickly the transmission coefficient increases; (3) for a fixed system length, the transmission peaks of the spin-up electrons move to lower Fermi energy with increasing Cd1-xMnxTe DMS QD radius, while the transmission of the spin-down electrons is almost unchanged; (4) the spin-polarized effect is slightly increased for larger magnetic fields; (5) the external static electric field moves the transmission peaks to higher or lower Fermi energy depending on the direction of the applied field; and (6) the spin-polarized effect decreases as the band offset increases. Our calculated results may be useful for the application of Cd1-xMnxTe DMS QD's to the spin-dependent microelectronic and optoelectronic devices.
Recent advances in application-oriented new generation diluted magnetic semiconductors

Yi Peng,Guo-Qiang Zhao,Zheng Deng,Chang-Qing Jin,,

DOI: https://doi.org/10.7498/aps.73.20231940

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:Diluted ferromagnetic semiconductors (DMSs) have attracted widespread attention in last decades, owing to their potential applications in spintronic devices. But classical group-III-IV, and -V elements based DMS materials, such as (Ga,Mn)As which depend on heterovalent (Ga 3+ , Mn 2+ ) doping, cannot separately control carrier and spin doping, and have seriously limited chemical solubilities, which are disadvantages for further improving the Curie temperatures. To overcome these difficulties, a new-generation DMS with independent spin and charge doping have been designed and synthesized. Their representatives are I-II-V based Li(Zn,Mn)As and II-II-V based (Ba,K)(Zn,Mn) 2 As 2 . In these new materials, doping isovalent Zn 2+ and Mn 2+ introduces only spins, while doping heterovalent non-magnetic elements introduces only charge. As a result, (Ba,K)(Zn,Mn) 2 As 2 achieves Curie temperature of 230 K, a new record among DMS where ferromagnetic orderings are mediated by itinerate carriers. Herein, we summarize the recent advances in the new-generation DMS materials. The discovery and synthesis of several typical new-generation DMS materials are introduced. Physical properties are studied by using muon spin relaxation, angle-resolved photoemission spectroscopy and pair distribution function. The physical and chemical pressure effects on the title materials are demonstrated. The Andreev reflection junction based on single crystal and the measurement of spin polarization are exhibited. In the end, we demonstrate the potential multiple-parameter heterojunctions with DMSs superconductors and antiferromagnetic materials.

physics, multidisciplinary
Spin filtering and spin separation in diluted magnetic semiconductor hybrid systems

Yong Guo

2003-01-01

Abstract:We demonstrate spin-dependent tunneling features of electronic transport in diluted magnetic semiconductor/semiconductor hybrid systems. It is shown that the geometrical asymmetry of the multilayer heterostructure results in the asymmetry of the spin polarization on the external electric field. The degree of the asymmetry can be changed by adjusting the structural configuration and the magnitudes of both the external electric and magnetic fields. It is further confirmed that the asymmetric heterostructure where two paramagnetic layers have different Mn2+ concentrations shows obvious behavior of the spin-filter diode and features of spin separation. PACS numbers: 75.50.Pp, 72.25.-b, 72.10.-d, 73.23.-b Advanced Nanomaterials and Nanodevices (IUMRS-ICEM 2002, Xi’an, China, 10–14 June 2002)
Spin-polarized Transport Properties in Diluted Magnetic Semiconductor Heterostructures

郭永

DOI: https://doi.org/10.3969/j.issn.1000-3819.2002.04.023

2002-01-01

Abstract:Spin filtering and spin separation characteristics in diluted magnetic semiconductor heterostructures in the presence of both external electric field and magnetic field have been investigated by using of the Green′s function method and group velocity approximations. The results indicate that there exist great discrepancies in the transmission coefficient for electrons with different spin orientations through the same diluted magnetic semiconductor heterostructure, and the difference of the tunneling times can reach by up to several orders of magnitude. The difference can be enhanced by the external magnetic field while it is reduced by the external electric field. The results imply that not only the diluted magnetic semiconductor heterostructure possess good spin filtering but also polarized electrons can be separated in time during tunneling through such a kind of structure.
Longitudinal Spin Transport In Diluted Magnetic Semiconductor Superlattices: The Effect Of The Giant Zeeman Splitting

Kai Chang,J. B. Xia,F. M. Peeters

DOI: https://doi.org/10.1103/PhysRevB.65.155211

IF: 3.7

2002-01-01

Physical Review B

Abstract:Longitudinal spin transport in diluted magnetic semiconductor superlattices is investigated theoretically. The longitudinal magnetoconductivity (MC) in such systems exhibits an oscillating behavior as function of an external magnetic field. In the weak magnetic-field region the giant Zeeman splitting plays a dominant role that leads to a large negative magnetoconductivity. In the strong magnetic-field region the MC exhibits deep dips with increasing magnetic field. The oscillating behavior is attributed to the interplay between the discrete Landau levels and the Fermi surface. The decrease of the MC at low magnetic field is caused by the s-d exchange interaction between the electron in the conduction band and the magnetic ions. The spin polarization increases rapidly with increasing magnetic field and the longitudinal current becomes spin polarized in strong magnetic field. The effect of spin-disorder scattering on MC is estimated numerically for low magnetic fields and found to be neglectible for our system.
Spin-Polarized Ballistic Transport In Diluted Magnetic Semiconductor Quantum Wire Systems

Kai Chang,F. Peeters

DOI: https://doi.org/10.1103/PhysRevB.68.205320

IF: 3.7

2003-01-01

Physical Review B

Abstract:The energy dispersion of an electron in a double quantum wire with a diluted magnetic semiconductor barrier in between is calculated. An external magnetic field modifies significantly the energy dispersion of the electron which is different for the two spin states. The conductance exhibits many interesting peaks and dips which are directly related to the energy dispersions of the different electron spin states. These phenomena are attributed to the interwell coupling which can be tuned by the magnetic field due to the s-d exchange interaction.
Magnetic and transport percolation in diluted magnetic semiconductors

A. Kaminski,S. Das Sarma

DOI: https://doi.org/10.1103/PhysRevB.68.235210

2003-07-12

Abstract:The ferromagnetic transition in a diluted magnetic semiconductor with localized charge carriers is inevitably a percolation transition. In this work we theoretically study the correlation between this magnetic percolation and transport properties of the sample, including the possibility of a simultaneous transport percolation. We find nontrivial signatures of the percolating magnetic clusters in the transport properties of the system, including interesting non-monotonic temperature dependence of the system resistivity.

Materials Science

Spin Transport in Diluted Magnetic Semiconductors

Transport properties of diluted magnetic semiconductors: Dynamical mean field theory and Boltzmann theory

Spin-Dependent Transport in Diluted-Magnetic-Semiconductor/Semiconductor Quantum Wires

Diluted Magnetic Semiconductors in the Low Carrier Density Regime

Diluted Magnetic Semiconductors--bridging Spin and Charge

Spin-Polarized Transport in A Lateral Two-Dimensional Diluted Magnetic Semiconductor Electron Gas

Spin transport in quantum dot embedded in Aharonov–Bohm ring

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Spin-polarized Transport of Two-Dimensional Electron Gas Embedded in a Diluted Magnetic Semiconductor

Spin Transport in the heterogeneous structure containing Topological Insulator and Diluted Magnetic Semiconductor

Ge1-X Mn-X-Diluted Magnetic Semiconductor Nanostructures for Spintronics

Exchange anisotropy effects on ferromagnetism in diluted, magnetic semiconductors

Spin-Dependent Transport and Densities of States in Non-collinear Magnetic Barriers

Magnetic MnxGe1-x Dots for Spintronics Applications

Spin-Dependent Transport Through Cd1-Xmnxte Diluted Magnetic Semiconductor Quantum Dots

Recent advances in application-oriented new generation diluted magnetic semiconductors

Spin filtering and spin separation in diluted magnetic semiconductor hybrid systems

Spin-polarized Transport Properties in Diluted Magnetic Semiconductor Heterostructures

Longitudinal Spin Transport In Diluted Magnetic Semiconductor Superlattices: The Effect Of The Giant Zeeman Splitting

Spin-Polarized Ballistic Transport In Diluted Magnetic Semiconductor Quantum Wire Systems

Magnetic and transport percolation in diluted magnetic semiconductors