Infrared reflection spectra of epitaxial Zn1-xMgxSe films grown on GaAs substrates

Donghong Wang,Daming Huang,Yanfeng, Wei,Caixia Jin,Jie Wang,Zhanghai Cheng,Wei L��
1997-01-01
Abstract:Zn1-xMgxSe films with x from 0 to 1 were grown on GaAs substrates by molecular beam epitaxy. Their infrared reflection spectra were measured at room temperature. Using classical quasi-harmonic oscillator model of dielectric function and considering the effect of substrate, the reflection spectra were calculated and compared to the experimental results. Dielectric function of alloy-layer can be derived by comparing the infrared reflection spectra of Zn1-xMgxSe and calculation spectra. Then, light reflection index and coefficient of light extinction were obtained. It was found that the reflection spectra show different behaviors for x<0.2, 0.2<x<0.5 and x��0.5.
What problem does this paper attempt to address?