Excitonic Spectra of ZnSe Thin Films Grown on GaAs Substrates

盛传祥,王兴军,俞根才,黄大鸣
DOI: https://doi.org/10.3321/j.issn:0253-4177.2000.12.006
2000-01-01
Abstract:ZnSe films with thickness from 0.045 to 1.4μm were grown on GaAs (100) substrates. The results X-ray diffraction spectra indicate that the strain in the film relaxes with the increase of the film thickness. The energy split, shift, and reversion of the heavy and light hole excitons are observed in the low temperature reflectance and photoluminescence (PL) spectra. The properties of the bound exciton PL are also found to change with the film thickness. Acceptor-bound-exciton line (I1) is dominated in the PL spectra of the thinnest film. Its intensity decreases gradually with the increase of film thickness. Meanwhile, an enhancement of neutral-donor-bound-exciton line (I2) with the film thickness is observed.
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