Growth of Crystalline ZnSe : N Thin Films by Pulsed Laser Ablation Deposition

BH Boo,N Xu,JK Lee

DOI: https://doi.org/10.1016/s0042-207x(01)00384-0

IF: 4

2001-01-01

Vacuum

Abstract:Crystalline ZnSe thin films doped with nitrogen have been grown on polished GaAs(100) and Si(100) substrates by pulsed laser ablation deposition (PLAD) in N2 atmospheres. Atomic force microscopy (AFM) shows that the surface morphology of the PLAD-grown ZnSe thin films is flat and dense, and the roughness for best films grown on GaAs(100) in 2×10−3Torr N2 ambient is about 1.3nm. X-ray diffraction (XRD) results indicate that the ZnSe film grown on GaAs(100) at 2×10−3Torr is a single crystalline epitaxial layer. The full-width at half-maximum of ZnSe(400) peak for best film grown on GaAs(100) is 232arcsec. XRD and AFM analyses indicate that the crystallographic quality of PLAD-grown ZnSe thin films largely depends on ambient pressure and lattice match. X-ray photoelectron spectroscopy demonstrates that Zn and Se atoms in the PLAD-grown ZnSe thin film on GaAs(100) at 2×10−3Torr bond each other, and the concentrations of [N] and [O] are 7% and less than 3%, respectively, and no other impurities exist. The concentration of doped nitrogen for the best ZnSe thin film grown on GaAs(100) was estimated to be over 10211/cm3.