Abstract:Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride compound has previously only been synthesized in a bulk form by ultrahigh-pressure synthesis at 5 GPa. Three key factors have been found to enable heteroepitaxial film growth: (i) precise tuning of the individual flux rates of Ca and Zn, (ii) the use of GaN template layers on sapphire c-plane as substrates, and (iii) the application of MBE with an active N-radical source. Because other attempts at physical vapor deposition and thermal annealing processes have not produced CaZn2N2 films of any phase, this rf-plasma-assisted MBE technique represents a promising way to stabilize CaZn2N2 epitaxial films. The estimated optical band gap is ~1.9 eV, which is consistent with the value obtained from bulk samples. By unintentional carrier doping, n- and p-type electronic conductions are attained with low carrier densities of the order of 1013 /cm3. These features represent clear advantages when compared with Zn-based oxide semiconductors, which usually have much higher carrier densities irrespective of their intentionally undoped state. The carrier mobilities at room temperature are 4.3 cm2/(Vs) for electrons and 0.3 cm2/(Vs) for hole carriers, which indicates that transport properties are limited by grain boundary scattering, mainly because of the low-temperature growth at 250 {\deg}C, which realizes a high nitrogen chemical potential.

Pulsed Laser Deposition of ZnSe:N Epilayers Assisted by Active Atomic Nitrogen Beams

Growth of Crystalline ZnSe : N Thin Films by Pulsed Laser Ablation Deposition

Pulsed Laser Deposition of Nanocrystalline Znse : N Thin Films

Growth of Nanocrystalline ZnSe:N Films by Pulsed Laser Deposition

p-Type nitrogen doped ZnSe epilayers by ionized cluster beam epitaxy

Pulsed Laser Ablation Deposition of Crystalline ZnSe Thin Films

Growth of Znse Films on Gaas by Ionized Cluster Beam Epitaxy

Growth and Electro-Optical Characteristics of CdSe / GaAs Epilayers Prepared by Electron Beam Epitaxy

Growth of Znse Nanowires by Pulsed-Laser Deposition

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Bismuth Doped Znse Films Fabricated on Silicon Substrates by Pulsed Laser Deposition

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Molecular-beam-epitaxy growth of GaN on GaAs ( lOO ) by using reactive nitrogen source 2

Spectroscopic Characterization of the Plasma Generated During the Deposition of AlxGa1−xN Films by Pulsed Laser Co-Ablation of Al and GaAs Targets in Electron Cyclotron Resonance Nitrogen Plasma

Effects of the experimental conditions on the growth of crystalline ZnSe nano-needles by pulsed laser deposition

Heteroepitaxial Thin-Film Growth of a Ternary Nitride Semiconductor CaZn2N2

Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

Molecular beam epitaxy and characterization of Zn1-xMnxSe/ZnSe superlattices on (100) GaAs substrates

Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target

Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures