Abstract:A single crystalline GaN film on Si(111) with a GaN buffer layer is grown by a simple reactive evaporation method. Scanning electron microscopy, x-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence measurement (PL), and Hall measurement results indicate that the single crystalline wurtzite GaN was successfully grown on the microcrystalline GaN buffer layers on Si(111) substrate. The surface of the GaN films is mirror-like and crack-free. A pronounced GaN (0002) peak appears in the XRD pattern. The full width at half maximum (FWHM) of the double-crystal x-ray rocking curve for (0002) diffraction from the GaN epilayer is 30 arcmin. The TEM reveals that a 10 nm GaN buffer layer in the microcrystalline state exists between the Si substrate and the epilayer, which dissipates most of the stress energy. The PL spectrum shows that the GaN epilayer emits light at the wavelength of 365 nm with a FWHM of 8 nm (74.6 meV). The unintentionally doped films were n type with a carrier concentration of 1.76 x 10(18)/cm(3) and an electron mobility of 142 cm(3)/V s. The growth technique described is simple but very powerful for growing single crystalline GaN films on Si substrates. (C) 2000 American Institute of Physics. [S0021-8979(00)03406-X].

Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Molecular-beam-epitaxy growth of GaN on GaAs ( lOO ) by using reactive nitrogen source 2

Heteroepitaxy of GaN by using an ionized N source

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

X-Ray Diffraction Reciprocal Space And Pole Figure Characterization Of Cubic Gan Epitaxial Layers Grown On (001) Gaas By Molecular Beam Epitaxy

Gan heteroepitaxial growth techniques

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Atomically-Flat GaAs (001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures

Growth of Znse Films on Gaas by Ionized Cluster Beam Epitaxy

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Atomically Flat (0 0 1)gaas Surface Prepared by Two-Step Atomic-Hydrogen Treatment and Its Application to Heteroepitaxy of GaN

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Nitridation of GaAs(001) Using N2-RF Plasma

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate