Abstract:In this study, we developed very simple and ULSI (ultra large scale integration) compatible fabrication processes for group-IV (Si 1 –x Ge x and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using double Ge + /Si + hot-ion implantation into a SiO 2 layer with larger bandgap E G and the post-furnace annealing. We successfully demonstrated the near-infrared (IR) photoluminescence (PL) from Si 1 –x Ge x -QDs. Transmission electron microscopy observations of single-crystallized Si 1 –x Ge x -QDs revealed that the diameter and the QD density were 3.6 ± 0.9 nm and (2.6 ± 0.4) × 10 12 cm −2 , respectively. In addition, Ge atoms were detected in the Si 1 –x Ge x -QDs by the energy dispersive x-ray spectroscopy analysis, and the Ge fraction of Si 1– x Ge x -QDs was varied from 0.06 to 0.26 by changing the Ge ion dose. The increase in the PL intensity by forming gas annealing was attributed to the dangling-bond reduction by the H-atom termination method. The PL spectrum of Si 1 –x Ge x -QDs was fitted by PL components of two QD structures containing Si 1 –x Ge x and Si materials. The PL intensity and PL-peak photon energy of Si 1 –x Ge x -QDs strongly depended on the Ge fraction. The Si 1 –x Ge x -QDs achieved the maximum PL intensity at x ≈ 0.13. High PL-peak photon energy (∼1.31 eV) of Si 1 –x Ge x -QDs is attributed to the quantum confinement effect of carriers in QDs. Consequently, group-IV semiconductor QDs including Si 1 –x Ge x , Si, SiC, and C, through the simple hot-ion implantation into the SiO 2 layer, exhibited a wide range of PL emissions from the near-IR to ultraviolet regions.

Photoluminescence of Ge Quantum Dots Prepared on Porous Silicon by Ultrahigh Vacuum Chemical Vapor Deposition

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Optical Characterization of Ge Quantum Dots Grown on Porous Silicon by UHV/CVD

Area preferential nucleation of Ge nano-dots on nano-size porous silicon

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Photoluminescence of Ge quantum dots buried in silicon

Photoluminescence of Ge Nanoparticles Embedded in Sio2 Glasses Fabricated by A Sol-Gel Method

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

High-Density Crystalline Quantum Dots in Blue Emitting Porous Silicon

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Tunable Photoluminescence of Self-Assembled GeSi Quantum Dots by B+ Implantation and Rapid Thermal Annealing

Optical study of Ge quantum dots and infrared photodetectors

Optical properties of Ge/Si quantum dot superlattices

Photoluminescence from Ge Clusters Embedded in Porous Silicon

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Optical And Structural Investigation Of Stacked Ge Quantum Dots

Ultra-high-density Ge quantum dots on insulator prepared by high-vacuum electron-beam evaporation

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Role of surface passivation on visible and infrared emission of Ge quantum dots formed by dewetting