Abstract:We investigate the nanoheteroepitaxy of SiGe and Ge quantum dots (QDs) grown on nanotips substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the nanoheteroepitaxy over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the nanotips with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The nanotips arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

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Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Optical Characterization of Ge Quantum Dots Grown on Porous Silicon by UHV/CVD

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Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

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High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Synthesis and Optical Properties of Germanium Nanorod Array Fabricated on Porous Anodic Alumina and Si-Based Templates

Interface Interdiffusion Intensified by Formation of Quantum Dots

Photoluminescence of Ge quantum dots buried in silicon

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots

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