Abstract:This dissertation presents a serial study on optical properties of different semiconductor materials. Three main types of studies are addressed: The role of doping levels of N and Al atoms in the room-temperature photoluminescence (PL) of 4H-SiC films for optoelectronic applications; the use of a basic Monte Carlo method combined with probability calculations of the time-dependent Schroedinger equation to manifest multi-photon absorption and emission of II-VI compound quantum dots (QDs) for bioimaging; a theoretical quantum chemistry approach to study of structure and optical properties of InGaAsN and GaAs clusters for laser technology applications. 4H-SiC films were grown on AlN/SiC(100) substrates by a chemical vapour deposition (CVD) system. Three well-defined room-temperature PL peaks close to the band-gap energy were observed. By a detailed theoretical analysis of optical transitions in the samples, it was found that the PL peaks are most probably due to the optical transitions between impurity levels and band edges, and the transition between the second minimum of the conduction band and the top of the valance band. Special attention has been paid to effects of doping levels of N and Al impurities. Optical transitions in several II-VI semiconductor QDs have been studied by a quantum Monte Carlo method. We model the QD energy band structure by a spherical square quantum well and the electrons in the conduction band and holes in the valence band by the effective mass approximation. The optical probabilities of optical transitions induced by ultrafast and ultraintense laser pulses are calculated from the time-dependent Schroedinger equation. With the inclusion of the nonradiative electron-phonon processes, the calculated absorption and emission spectra are in agreement with experimental work. The dynamic processes and up-conversion luminescence of the QDs, required for many applications including bio-imaging, are demonstrated. Quantum chemistry is used to study InGaAsN and GaAs nano systems. The molecular structures of a series of dilute-nitride zinc blende InGaNAs clusters are examined from the energy point of view with a semi-empirical method. The optimum cluster configurations are identified by which we can identify the detailed bonding structures and the effects of In mole fraction. After proper geometry construction, an effective central insertion scheme has been implemented to study the electronic band structures of GaAs at the first-principles level. The formation of energy bands and quantum confinement effects have been revealed, thus providing theoretical support for laser design.

Quantum Characterization of Some Cluster-Based Materials

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Optical properties of Ge/Si quantum dot superlattices

Formation and Characterization of Quasi-Free Clusters

Quantum Chemistry Study of Energy Band Structures of GaAs Nano Clusters

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Experimental Observation of Surface Modes of Quasifree Clusters.

Electronic structure and optical property of semiconductor nanocrystallites

Studies of Bi-layers Growth Mechanism of Silver Bromide Molecular Clusters Prepared Via Electroporation of Vesicles and Quantum Confinement Effects Applications of Molecular Clusters

Behind the Quantum Confinement and Surface Passivation of Nanoclusters

Structural, electronic and optical properties of tetrahedral $Si_xGe_{47-x}:H_{60}$ nanocrystals: A Density Functional study

Structure and optical properties of the Ge and Sn quantum-dots

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

SiGe Raman spectra vs. local clustering/anticlustering : Percolation scheme and ab initio calculations

Optical-Properties of Germanium Cluster-Based Nanostructured Film

Utilizing Quantum Processor for the Analysis of Strongly Correlated Materials

Carbon cluster emitters in silicon carbide

Si–Si Optical Phonon Behavior in Localized Si Clusters of Si X Ge1−x Alloy Nanocrystals

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays