Abstract:Technology involving hybrid superconductor-semiconductor materials is a promising avenue for engineering quantum devices for information storage, manipulation, and transmission. Proximity-induced superconducting correlations are an essential part of such devices. While the proximity effect in the conduction band of common semiconductors is well understood, its manifestation in confined hole gases, realized for instance in germanium, is an active area of research. Lower-dimensional hole-based systems, particularly in germanium, are emerging as an attractive platform for a variety of solid-state quantum devices, due to their combination of efficient spin and charge control and long coherence times. The recent experimental realization of the proximity effect in germanium thus calls for a theoretical description that is tailored to hole gases. In this work, we propose a simple model to describe proximity-induced superconductivity in two-dimensional hole gases, incorporating both the heavy-hole (HH) and light-hole (LH) bands. We start from the Luttinger-Kohn model, introduce three parameters that characterize hopping across the superconductor-semiconductor interface, and derive explicit intraband and interband effective pairing terms for the HH and LH bands. Unlike previous approaches, our theory provides a quantitative relationship between induced pairings and interface properties. Restricting our general model to an experimentally relevant case where only the HH band crosses the chemical potential, we predict the coexistence of $s$-wave and $d$-wave singlet pairings, along with triplet-type pairings, and modified Zeeman and Rashba spin-orbit couplings. Our model thus presents a starting point for theoretical modeling of quantum devices based on proximitized hole gases, fueling further progress in quantum technology.

Quantum capacitance properties of the holes in planar germanium

Measuring The Complex Admittance And Tunneling Rate Of A Germanium Hut Wire Hole Quantum Dot

Coupling of hole double quantum dot in planar germanium to a microwave cavity

Coupling of a hole double quantum dot in planar germanium to a microwave cavity

Gate-defined quantum point contacts in a germanium quantum well

Strong hole-photon coupling in planar Ge for probing charge degree and strongly-correlated states

Modelling of planar germanium hole qubits in electric and magnetic fields

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Modeling of planar germanium hole qubits in electric and magnetic fields

Capacitance-Voltage Characteristics Of A Schottky Junction Containing Sige/Si Quantum Wells

Hard superconducting gap in germanium

Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers

Superconducting Proximity Effect in Two-Dimensional Hole Gases

Quantum Transport Quality of a Processed Undoped Ge/SiGe Heterostructure

Investigation of the Quantum Confinement Effects in Ge Dots by Electrical Measurements

The germanium quantum information route

The quantum geometric origin of capacitance in insulators

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium

Quantum Hall effect and current distribution in the 3D topological insulator HgTe