Abstract:Charge injection and transportation process is a fundamental problem to Si nanocrystals (Si-ncs) based electric and photonic devices. In the manuscript, a single layer of Si-ncs sandwiched by amorphous Si carbide (a-SiC) was prepared by excimer laser annealing of a-SiC/a-Si/a-SiC multilayers, and the charging effect was then characterized by Kelvin probe force microscopy (KPFM) on the microscopic scale. Opposite charges were injected into Si-ncs through the biased tip and formed a core-ring or up-down shaped distribution. The decay characteristics showed that these opposite charges would not only vertically tunnel through the bottom a-SiC layer to substrate but also laterally transport and recombine with each other driven by the attractive Coulomb force. Besides, the charge retention time was also found dependent on the injection biases, which is tentatively ascribed to the charge trapping by the Si-ncs/a-SiC interface states under high bias scanning. The analysis was further supported by conductive atomic force microscopy (CAFM) measurement, in which the current-voltage curves gradually shifted during the repetition test, probably because of bias screening by the trapped charges at these interface states.

Optical Absorption and Charging Effect in Nano-Crystalline Ge/SiNx Multilayers

Structural and Electrical Properties of Laser-Crystallized Nanocrystalline Ge Films and Nanocrystalline Ge/SiNxmultilayers

SiNx thickness dependent morphology and mechanical properties of CrAlN/SiNx nanomultilayers

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Structural and Electrical Characteristics of Ge Nanoclusters Embedded in Al2o3 Gate Dielectric

Effect of Annealing on Charge Transfer in Ge Nanocrystal Based Nonvolatile Memory Structure

Mixed-ligand-functionalized Silicon-Germanium Alloy Nanocrystals with Improved Carrier Mobilities.

Microscopic Observation of Lateral and Vertical Charge Transportation in Si Nanocrystals Sandwiched by Amorphous SiC Layers

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

The Charge Storage of the Nc-Si Layer

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered Gesio Ternary Precursor

The Formation of Ge Nanocrystals in a Metal–insulator–semiconductor Structure and Its Memory Effect

Microscopic Understanding of the Carrier Transport Process in Ge Nanocrystals Films

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Dielectric Engineering of Ge Nanocrystal/Sio2 Nanocomposite Thin Films with Ge Ion Implantation: Modeling and Measurement

Electroluminescence and Carrier Transport of SiO2 Film Containing Different Density of Ge Nanocrystals

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature