Abstract:We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called phase change materials. PCM technology has made rapid progress in a short time, having passed older technologies in terms of both sophisticated demonstrations of scaling to small device dimensions, as well as integrated large-array demonstrators with impressive retention, endurance, performance and yield characteristics. We introduce the physics behind PCM technology, assess how its characteristics match up with various potential applications across the memory-storage hierarchy, and discuss its strengths including scalability and rapid switching speed. We then address challenges for the technology, including the design of PCM cells for low RESET current, the need to control device-to-device variability, and undesirable changes in the phase change material that can be induced by the fabrication procedure. We then turn to issues related to operation of PCM devices, including retention, device-to-device thermal crosstalk, endurance, and bias-polarity effects. Several factors that can be expected to enhance PCM in the future are addressed, including Multi-Level Cell technology for PCM (which offers higher density through the use of intermediate resistance states), the role of coding, and possible routes to an ultra-high density PCM technology.

Simulation of Retention Behavior for the Phase Change Memory

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

A3-D Simulation Model and Study of Priming Effect for Phase Change Memory

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell

Microstructure characterization, phase transition, and device application of phase-change memory materials

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

Phase change memory technology

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Verilog-A model for phase change memory simulation

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

A Compact Phase Change Memory Model With Dynamic State Variables

Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich Ge$_2$Sb$_2$Te$_5$ Alloys

Thermal Modeling And Simulation Of Nonvolatile And Non-Rotating Phase Change Memory Cell