Abstract:Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach

Simulation of Retention Behavior for the Phase Change Memory

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Revisiting the Crystallization Model of Phase Change Memory with Ab Initio Simulations

Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

A3-D Simulation Model and Study of Priming Effect for Phase Change Memory

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

Investigation of Nano-Phase Change for Phase Change Random Access Memory

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

A Compact Phase Change Memory Model With Dynamic State Variables

A New Model of Phase Change Process for Thermal Energy Storage

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Transient Phase Change Analysis of Scaling in Phase Change Devices

A Phase Change Memory SPICE Model Adaptable to Different Device Geometry

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Microstructure characterization, phase transition, and device application of phase-change memory materials

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model