Abstract:This review focuses on the emerging reversible crystalline‐to‐crystalline phase transitions in phase‐change materials. It delves into the atomic structures and switching mechanisms of these atypical transitions, provides insights into their thermodynamic and kinetic features, and offers an outlook on the opportunities for developing novel phase‐change memory devices and on challenges that need to be addressed. Phase‐change random access memory (PCRAM) is one of the most technologically mature candidates for next‐generation non‐volatile memory and is currently at the forefront of artificial intelligence and neuromorphic computing. Traditional PCRAM exploits the typical phase transition and electrical/optical contrast between non‐crystalline and crystalline states of chalcogenide phase‐change materials (PCMs). Currently, traditional PCRAM faces challenges that vastly hinder further memory optimization, for example, the high‐power consumption, significant resistance drift, and the contradictory nature between crystallization speed and thermal stability, nearly all of them are related to the non‐crystalline state of PCMs. In this respect, a reversible crystalline‐to‐crystalline phase transition can solve the above problems. This review delves into the atomic structures and switching mechanisms of the emerging atypical crystalline‐to‐crystalline transitions, and the understanding of the thermodynamic and kinetic features. Ultimately, an outlook is provided on the future opportunities that atypical all‐crystalline phase transitions offer for the development of a novel PCRAM, along with the key challenges that remain to be addressed.

Transient Phase Change Analysis of Scaling in Phase Change Devices

Phase Transition Behaviors of Ga30Sb70/Sb80Te20 Nanocomposite Multilayer Films for Application in Phase Change Random Access Memory

Breaking the Speed Limits of Phase-Change Memory

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Investigation of Nano-Phase Change for Phase Change Random Access Memory

Transient Phase Change Effect During the Crystallization Process in Phase Change Memory Devices

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Effect of Scaling on Thermal Properties and Switching Operation of Phase Change Memory Devices

Study of geometric effect on phase change random access memory

Modeling of Transient Thermal Dissipation of Nanoscale Phase-Change Memory Cells in the Pulse Domain

Fullerene Thermal Insulation for Phase Change Memory

Phase-change technologies: from PCRAM to probe-storage to processors

Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

Tailoring Transient-Amorphous States: Towards Fast and Power-Efficient Phase-Change Memory and Neuromorphic Computing

Investigation on non-rotating and non-volatile phase change memory

Constraints and Resolution for Phase Change Materials and Memory Device Scaling

Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Exploiting nanoscale effects in phase change memories

Parasitic Capacitance Effect on Programming Performance of Phase Change Random Access Memory Devices

Impact of Thermal Boundary Resistance on Thermoelectric Effects of the Blade-Type Phase-Change Random Access Memory Device