Abstract:Asymmetric PCRAM structure with the upper contact opening at an offset to the bottom contact opening allowed us to improve the thermal distribution within the phase change layer and lower the reset current to 50% that of a conventional symmetrical structure. In terms of endurance, asymmetric cell lasted for 1.1 × 10 8 cycles which is at least 10X higher than the conventional symmetrical cell. These results were based on Ge 2 Sb 2 Te 5 as the phase change material. In this paper, we used nitrogen doped Ge 2 Sb 2 Te 5 [1] instead and the thickness of this phase change layer was 100 nm. During the sputtering of Ge 2 Sb 2 Te 5 , the Argon gas flow rate was fixed at 15 sccm while nitrogen flow rates of 0, 3, 4.5 and 6 sccm were introduced each time. Thus N2/Ar gas ratio of 0, 0.2, 0.3 and 0.4 were obtained respectively. After fabrication, the cell endurance of Asymmetric PCRAM cells incorporating Ge 2 Sb 2 Te 5 doped with varying concentrations of nitrogen was tested. During testing, the PCRAM was repeatedly Reset/Set and the resistances of the two states were recorded at every 100k cycles. The cell was considered to be functioning well when its Reset/Set resistance ratio was greater than 10. From experiments, N-doped asymmetric cell with N2/Ar gas ratio of 0.2 lasted 2.4 × 10 10 cycles which is 1000 times that of a conventional symmetrical PCRAM cells. The N2 doping concentration was also shown to be optimized when the N2/Ar gas ratio was fixed at 0.2. Higher doping concentrations with N2/Ar gas ratio of 0.3 and 0.4 decreased the cell endurance to 8.8 × 10 8 and 7.6 × 10 8 cycles respectively. Excessive doped nitrogen atoms might have degraded the phase change material, causing breakdown to occur sooner. N-doped conventional symmetrical PCRAM was also fabricated and its overwrite cycles were measured only up to 1.2 × 10 9 . With better thermal confinement, asymmetric PCRAM has proved to be better in endurance too. The above results were based on asymmetric PCRAM cells with 1 µm offset. [1] H. Horii et al, “A Novel Cell Technology Using N-doped GeSbTe Films For Phase Change RAM”, p. 177-178, VLSI Tech. 2003

Study of Phase Change Random Access Memory (PCRAM) at the Nano-Scale

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Investigation of Nano-Phase Change for Phase Change Random Access Memory

Study of geometric effect on phase change random access memory

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology

Transient Phase Change Analysis of Scaling in Phase Change Devices

Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Phase Change Random Access Memory for Neuro‐Inspired Computing

Material Selection Through Band-alignment Study for PCRAM Integration

Nonvolatile Phase Change Memory Nanocell Fabrication By Femtosecond Laser Writing Assisted With Near-Field Optical Microscopy

Breaking the Speed Limits of Phase-Change Memory

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Constraints and Resolution for Phase Change Materials and Memory Device Scaling

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

Elevated-Confined Phase-Change Random Access Memory Cells

ECRAM As Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing

Investigations of High Endurance Asymmetric Phase Change Random Access Memory