Abstract:It is demonstrated that the power consumption can be reduced to ≈53.7 fJ in a phase change memory cell with ≈3 nm‐wide graphene nanoribbon (GNR) as edge‐contact, whose cross‐sectional area reaches only ≈1 nm2. The asymmetric structure in the device enables the finding that the polarity of bias pulse determines its cycle endurance. Nonvolatile phase‐change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge‐contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low‐power operation. Here, it demonstrates that the power consumption can be reduced to ≈53.7 fJ in a cell with ≈3 nm‐wide graphene nanoribbon (GNR) as edge‐contact, whose cross‐sectional area is only ≈1 nm2. It is found that the polarity of the bias pulse determines its cycle endurance in the asymmetric structure. If a positive bias is applied to the graphene electrode, the endurance can be extended at least one order longer than the case with a reversal of polarity. In addition, the introduction of the hexagonal boron nitride (h‐BN) multilayer leads to a low resistance drift and a high programming speed in a memory cell. The work represents a great technological advance for the low‐power PCRAM and can benefit in‐memory computing in the future.

Elevated-Confined Phase-Change Random Access Memory Cells

Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Phase Change Random Access Memory Cell With Superlattice-Like Structure

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

Study of geometric effect on phase change random access memory

Superlatticelike Dielectric As A Thermal Insulator for Phase-Change Random Access Memory

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Thermal Analysis and Structural Design of Phase Change Random Access Memory

Thermal Expansion of Phase-Change Random Access Memory Cells

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Study of Phase Change Random Access Memory (PCRAM) at the Nano-Scale

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Investigation on non-rotating and non-volatile phase change memory

Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Transient Phase Change Analysis of Scaling in Phase Change Devices

Breaking the Speed Limits of Phase-Change Memory