Abstract:This review focuses on the emerging reversible crystalline‐to‐crystalline phase transitions in phase‐change materials. It delves into the atomic structures and switching mechanisms of these atypical transitions, provides insights into their thermodynamic and kinetic features, and offers an outlook on the opportunities for developing novel phase‐change memory devices and on challenges that need to be addressed. Phase‐change random access memory (PCRAM) is one of the most technologically mature candidates for next‐generation non‐volatile memory and is currently at the forefront of artificial intelligence and neuromorphic computing. Traditional PCRAM exploits the typical phase transition and electrical/optical contrast between non‐crystalline and crystalline states of chalcogenide phase‐change materials (PCMs). Currently, traditional PCRAM faces challenges that vastly hinder further memory optimization, for example, the high‐power consumption, significant resistance drift, and the contradictory nature between crystallization speed and thermal stability, nearly all of them are related to the non‐crystalline state of PCMs. In this respect, a reversible crystalline‐to‐crystalline phase transition can solve the above problems. This review delves into the atomic structures and switching mechanisms of the emerging atypical crystalline‐to‐crystalline transitions, and the understanding of the thermodynamic and kinetic features. Ultimately, an outlook is provided on the future opportunities that atypical all‐crystalline phase transitions offer for the development of a novel PCRAM, along with the key challenges that remain to be addressed.

Breaking the Speed Limits of Phase-Change Memory

Toward the Speed Limit of Phase-Change Memory

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials

Transient Phase Change Analysis of Scaling in Phase Change Devices

Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

Boosting crystallization speed in ultrathin phase-change bridge memory device using Sb2Te3

Recipe for ultrafast and persistent phase-change memory materials

Tailoring Transient-Amorphous States: Towards Fast and Power-Efficient Phase-Change Memory and Neuromorphic Computing

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

The “gene” of reversible phase transformation of phase change materials: Octahedral motif

Ultrahigh overall-performance phase-change memory by Yttrium dragging

Picosecond Operation of Optoelectronic Hybrid Phase Change Memory Based on Si‐Doped Sb Films

Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities

A scheme for enabling the ultimate speed of threshold switching in phase change memory devices

Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

Superlatticelike Dielectric As A Thermal Insulator for Phase-Change Random Access Memory

Investigation of Nano-Phase Change for Phase Change Random Access Memory