Abstract:Extending cycling endurance and suppressing programming noise of phase-change random-access memory (PCRAM) are the key challenges with respect to the development of nonvolatile working memory and high-accuracy neuromorphic computing devices. However, the large-scale atomic migration along electrical pulse direction in the unconstrained three-dimensional phase transitions of the phase-change materials (PCMs) induces big resistance fluctuations upon repeated programming and renders the classic PCRAM devices into premature failure with limited cycling endurance. Previous efforts of superlattice-like and superlattice PCM schemes cannot effectively resolve such issues. In this work, we demonstrated that, through fine-tuning the sputtering techniques, a phase-change heterostructure (PCH) of Sb2Te3/TiTe2 can be successfully constructed. In contrast to its superlattice-like counterpart with inferior crystal quality, the well-textured PCH architecture ensures the reliable (well-confined) two-dimensional phase transitions, promoting an ultralow-noise and long-life operation of the PCRAM devices. Our study thus provides a useful reference for better manufacturing the PCH architecture and further exploring the excellent device performances and other new physics.

Phase Change Random Access Memory Cell With Superlattice-Like Structure

Configuration Effects of Superlattice‐like Phase Change Material Structure

Superlatticelike Dielectric As A Thermal Insulator for Phase-Change Random Access Memory

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Ultrafast Switching in Nanoscale Phase-Change Random Access Memory with Superlattice-Like Structures

Cr7Ge33Te60/Hf16Ge6Sb78 Superlattice‐Like Thin Film with Triple‐Phase Transitions for Multilevel Phase‐Change Memory

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium

Inductively Coupled Plasma Etching for Phase-Change Material with Superlattice-Like Structure in Phase Change Memory Device

Fullerene Thermal Insulation for Phase Change Memory

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Compositionally Matched Nitrogen-Doped Ge2Sb2Te5/Ge2Sb2Te5 Superlattice-Like Structures for Phase Change Random Access Memory

Phase Transition Behaviors of Ga30Sb70/Sb80Te20 Nanocomposite Multilayer Films for Application in Phase Change Random Access Memory

Reliable 2D Phase Transitions for Low-Noise and Long-Life Memory Programming

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Elevated-Confined Phase-Change Random Access Memory Cells

Superlattice-Like Sb50se50/Ga30sb70 Thin Films for High-Speed and High Density Phase Change Memory Application

Superlattice-like Sb-Ge Thin Films for High Thermal Stability and Low Power Phase Change Memory

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Fast Switching and Low Power of Superlattice-Like SnSe2/Sb Thin Films for Phase Change Memory Application

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.