Abstract:Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

Fullerene Thermal Insulation for Phase Change Memory

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Phase Transition Behaviors of Ga30Sb70/Sb80Te20 Nanocomposite Multilayer Films for Application in Phase Change Random Access Memory

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Interfacial Resistance Characterization for Blade-Type Phase Change Random Access Memory

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Thermal Analysis and Structural Design of Phase Change Random Access Memory

Investigation of Nano-Phase Change for Phase Change Random Access Memory

Optimal Design of Phase Change Random Access Memory Based on 130nm Cmos Technology

Impact of Thermal Boundary Resistance on Thermoelectric Effects of the Blade-Type Phase-Change Random Access Memory Device

Study of geometric effect on phase change random access memory

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Asymmetric Structure with High Electric–thermal Conversion Efficiency for Nanoscale Phase Change Memory Based on Three‐dimensional Simulation

Thermoelectric Effects on Amorphization Process of Blade-Type Phase Change Random Access Memory

Elevated-Confined Phase-Change Random Access Memory Cells

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices