Abstract:Many experiments have shown that three-dimensional-confined grain refinement (GR) textures in phase-change memory reduce power consumption and improve endurance performance. However, a lack of knowledge on the GR mechanisms and their influence on device performances challenges designs that concurrently enhance the comprehensive device performances using the same impurity-doped strategy. Here, we experimentally observe dramatic GR in carbon-doped Ge2Sb2Te5 (GST), which also presents reduced power consumption and enhanced endurance performances. We provide low power consumption evidence that thermal conductivity controls the thermal transport heat loss and is proportional to the size of nanoscale grains because the boundary severely scatters phonons. Our simulations indicate that the short carbon chains in the boundary interlace with each other and trend to form trialkyl carbon atoms that constitute the basic local environment of graphene. The stable sheet consists of aggregated carbon, which is even stable above the melting temperature of GST and acts as a second-phase drag to refine the grain size. The enhanced endurance is explained by the restricted migration from the stable carbon sheet, which is verified by the greatly reduced diffusion coefficient of the host atoms in the boundary because of the less shielding effect from the core electrons in carbon and strong bonds formed between host and carbon atoms. Our findings show that the reduced power consumption and enhanced endurance from GR engineering are feasible in phase-change memory, which has been largely overlooked.

Constraints and Resolution for Phase Change Materials and Memory Device Scaling

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Transient Phase Change Analysis of Scaling in Phase Change Devices

Investigation of Nano-Phase Change for Phase Change Random Access Memory

Nanoscaling of Phase Change Memory Cells for High Speed Memory Applications

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

A Nano-Scale-Sized 3d Element for Phase Change Memories

Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials

Ultrafast Switching in Nanoscale Phase-Change Random Access Memory with Superlattice-Like Structures

Investigation on non-rotating and non-volatile phase change memory

Interface Engineering to Enhance Phase Change Memory Programmability

Exploiting nanoscale effects in phase change memories

Nanoscale Phase-Change Materials And Devices

Improving the Performance of Phase-Change Memory by Grain Refinement

Parasitic Capacitance Effect on Programming Performance of Phase Change Random Access Memory Devices

Study of Phase Change Random Access Memory (PCRAM) at the Nano-Scale

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Configuration Effects of Superlattice‐like Phase Change Material Structure

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power