DRAM/PCM-Based Hybrid Memory Simulator
De-Zhi ZHANG,Shou-Hong WAN,Li-Hua YUE
DOI: https://doi.org/10.15888/j.cnki.csa.005967
2017-01-01
Abstract:Phase Change Memory (PCM) has become a candidate of future main memories due to its attractive characteristics of non-volatility,high access speed,and low power consumption.Meanwhile,how to efficiently integrate PCM into current memory systems is becoming a hot topic.Generally,there are a number of choices to use PCM as main memory,e.g.,to construct PCM-only main memory systems,or to construct DRAM/PCM-based hybrid memory systems.However,the conflict between numerous PCM-related researches and lack of real devices hinders evaluations of PCM-aware algorithms.Therefore,in this paper,we propose a DRAM/PCM-based hybrid memory simulator.The new features of the simulator are manifold.First,it can simulate different DRAM/PCM-based memory systems,including the hierarchical architecture (DRAM as the cache of PCM) and the hybrid architecture (both DRAM and PCM as main memory).Second,it leverages a clock-accurate timing model to emulate accesses on PCM.Third,it offers a hybrid memory allocation interface that can be easily used by programmers.After a description of the simulator framework,we present basic evaluation results and a case study of the simulator,which suggest its feasibility.