Abstract:Spin-transfer torque RAM (STT-RAM) is an emerging non-volatile memory that has been recognized as the potential candidate to replace SRAM. Compared with SRAM, STT-RAM has advantages of non-volatility, zero leakage power, and higher density. To further improve data density, multi-level cell (MLC) STT-RAM that can store two bits per cell has been proposed. However, writing hard bit of a cell would write its soft bit to the same value as well, which complicates the write operation of MLC STT-RAM. Although two-step transition (TT) is usually adopted to ensure the data correctness during a write operation, it incurs overhead of additional energy consumption and performance degradation. In this article, we propose the two-step elimination (TSE) scheme to eliminate TTs while ensure data integrity. By flipping hard bits of the cells that suffered from TTs, the TSE scheme could reduce TTs to soft transitions (STs) or zero transitions (ZTs), which incur much less overhead than TTs. To keep track of the flipped cells effectively, 6-bit TSE tag is introduced. We exploit tag reversing and advanced mode of the TSE scheme to further improve the performance. The experimental results showed that our scheme could reduce 61 percent TTs and achieve significant lifetime improvement, compared with conventional MLC STT-RAM (CMLC) scheme.

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Characterization of Programmable Charge-Trap Transistors (ctts) in Standard 28-Nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications

CTT-based Non-Volatile Deep Neural Network Accelerator Design

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

An Offset-Cancellation Technique Using Charge-Trap Transistors and Asynchronous Programming Scheme

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-Nm DRAM Node—Part I: Defect-Based Statistical Compact Model

Operation Scheme Optimization for Charge Trap Transistors (ctts) Based on Fully Depleted Silicon-on-Insulator (FDSOI) Platform

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization

Simulation of Charge Trapping Memory with Novel Structures

Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

TSE: Two-Step Elimination for MLC STT-RAM Last-Level Cache

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

Local Accumulated Free Carriers in Charge Trapping Memory

Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Novel Multi-Bit Non-Uniform Channel Charge Trapping Memory Device with Virtual-Source Nand Flash Array

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories