Abstract:Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of Phi(M1)/Phi(M2) have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

Operation Scheme Optimization for Charge Trap Transistors (ctts) Based on Fully Depleted Silicon-on-Insulator (FDSOI) Platform

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Characterization of Programmable Charge-Trap Transistors (ctts) in Standard 28-Nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications

Characterization of Charge-Trap-Transistor (CTT) Threshold Voltage Degradation and DifferentialPair-Based Memory Design

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Simulation of Charge Trapping Memory with Novel Structures

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Optimization of charge pumping technique in polysilicon TFTs for geometric effect elimination and trap state density extraction

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break

14-nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

Optimizing InGaAs/GaAsSb Staggered Bandgap U-Gate Line TFET With p+-Pocket Implant and Negative Capacitance for Enhanced Performance

Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors