Abstract:A memristive crossbar array (MCA) is an ideal platform for emerging memory and neuromorphic hardware due to its high bitwise density capability. A charge trap memristor (CTM) is an attractive candidate for the memristor cell of the MCA, because the embodied rectifying characteristic frees it from the sneak current issue. Although the potential of the CTM devices has been suggested, their practical viability needs to be further proved. Here, a Pt/Ta2 O5 /Nb2 O5- x /Al2 O3- y /Ti CTM stack exhibiting high retention and array-level uniformity is proposed, allowing a highly reliable selector-less MCA. It shows high self-rectifying and nonlinear current-voltage characteristics below 1 µA of programming current with a continuous analog switching behavior. Also, its retention is longer than 105 s at 150 °C, suggesting the device is highly stable for non-volatile analog applications. A plausible band diagram model is proposed based on the electronic spectroscopy results and conduction mechanism analysis. The self-rectifying and nonlinear characteristics allow reducing the on-chip training energy consumption by 71% for the MNIST dataset training task with an optimized programming scheme.

Characterization of Programmable Charge-Trap Transistors (ctts) in Standard 28-Nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications

Characterization of Charge-Trap-Transistor (CTT) Threshold Voltage Degradation and DifferentialPair-Based Memory Design

CTT-based Non-Volatile Deep Neural Network Accelerator Design

Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

Operation Scheme Optimization for Charge Trap Transistors (ctts) Based on Fully Depleted Silicon-on-Insulator (FDSOI) Platform

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

An Offset-Cancellation Technique Using Charge-Trap Transistors and Asynchronous Programming Scheme

14-nm FinFET 1.5 Mb Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Differential Current Sensing

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory

Simulation of Charge Trapping Memory with Novel Structures

Novel Multi-Bit Non-Uniform Channel Charge Trapping Memory Device with Virtual-Source Nand Flash Array

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

Local Accumulated Free Carriers in Charge Trapping Memory

A Memristive Neural Network Computing Engine using CMOS-Compatible Charge-Trap-Transistor (CTT).

An Analog Neural Network Computing Engine using CMOS-Compatible Charge-Trap-Transistor (CTT)

Evidence of transport degradation in 22 nm FD-SOI charge trapping transistors for neural network applications

Retention Secured Nonlinear and Self-Rectifying Analog Charge Trap Memristor for Energy-Efficient Neuromorphic Hardware

Non-Volatile Threshold Adaptive Transistors with Embedded RRAM

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET