Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

Discussion on the CHE Programming Characteristics with the Scaling Down of Charge Trapping Flash Memory

Simulation of Charge Trapping Memory with Novel Structures

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Distribution and Impact of Local Trapped Charges in SONOS Memory

Effects of CHE and CHISEL Programming Operation on the Characteristics of SONOS Memory

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

Constraints and Resolution for Phase Change Materials and Memory Device Scaling

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

A novel flash memory cell and design optimization for high density and low power application

Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Simulation on endurance characteristic of charge trapping memory

Scaling Dependence of Memory Windows and Different Carrier Charging Behaviors in Si Nanocrystal Nonvolatile Memory Devices

Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.

Comparison of Local Programming Method for Multi-Bit/Level 90nm Sonos Memory

Novel Multi-Bit Non-Uniform Channel Charge Trapping Memory Device with Virtual-Source Nand Flash Array

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology