Abstract:The impact of shallow trench isolation (STI) on non-volatile memories has become much more serious for sub-90-nm CMOS technologies. This paper uses the localized charge trapping polysilicon-oxide-nitride-oxide-silicon (SONOS) flash memory cells to investigate STI edge effect on programming disturb when the channel hot electron injection programming method is applied. The different programming disturbs between the central cells far from STI and the edge cells close to STI are experimentally presented on the array level. At the programmed state, the edge cells suffer larger decrease of threshold voltage compared to the central cells under the same drain disturb. However, both edge and central cells at the erased state have not any significant variations of threshold voltage distribution under the same disturb conditions. In addition, both edge and central cells demonstrate almost the same behaviors under gate disturb. Two-dimension process simulation results show that the edge cells suffer a higher compressive stress caused from STI corner than the central cells. The higher compressive stress increases hole mobility, which is mainly responsible for the relatively serious drain disturb in the programmed edge cells.

Effects of CHE and CHISEL Programming Operation on the Characteristics of SONOS Memory

Comparison of Local Programming Method for Multi-Bit/Level 90nm Sonos Memory

The Promising Multi-Bit/level Programming Operations for Nano-Scaled SONOS Memory

Optimization of Polysilicon Gate Etching Process in SONOS Memory Fabrication

Distribution and Impact of Local Trapped Charges in SONOS Memory

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Novel self-convergent programming method using source-induced band-to-band hot electron injection

Discussion on the CHE Programming Characteristics with the Scaling Down of Charge Trapping Flash Memory

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

Improved performance of Si-NC memory using a novel two-step program scheme

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Investigation of Impact of Shallow Trench Isolation on SONOS Type Memory Cells

Interface Engineering to Enhance Phase Change Memory Programmability

Programming operations analysis and statistics in 1S1R OTS+PCM Double‐Patterned Self‐Aligned structure

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory