Abstract:A novel sensing current protection enhanced (SCPE) technique and high-voltage (HV) generating systems are adopted to greatly enhance the advantages of the twin-bit cell. The SCPE technique provides the tradeoff of sensing margin loss between "1" and "0" bits sensing case to realize fast read access. The read speed is improved by 7.7%. HV generating systems with parallel-series-transform and capacitance-shared techniques are proposed to satisfy the complicated requirements of output capability and current drivability with lower area penalty. The HV periphery area decreases by 71%. A 1.5-V 280-KBytes embedded NOR flash memory IP has been fabricated in HHGrace (Shanghai Huahong Grace Semiconductor Manufacturing Corporation) 90-nm 4 poly 4 metal CMOS process. The complicated operation voltages and access time of 23.5 ns have been achieved at 1.5 V. The die size of the proposed IP is 0.437 mm(2) and the area size of charge pump has been reduced to 0.006 mm(2) on average.

180Nm 4mb High Speed High Reliability Embedded SONOS Flash Memory

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Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

A 280-Kbytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

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A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

A Novel Reverse Read Array Architecture for Embedded SONOS Type Flash Memory

A 4b/cell 8gb NROM Data-Storage Memory with Enhanced Write Performance.

A Compact Flash Memory For Embedded System Applications

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Novel High-Speed Radiation Hardened Sense Amplifier for SOI Based SONOS Memory

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A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density

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TID Characterization of 0.13&#x00b5;m SONOS Cell in 4mb NOR Flash Memory

A 65-Nm 1-Gb nor Floating-Gate Flash Memory with Less Than 50-Ns Access Time

Radiation Hardened Read Circuit with High Reliability for SOI Based SONOS Memory