Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Failure Localization of Bipolar Integrated Circuits by Implementing Active Voltage Contrast

Feasibility Study of the Application of Voltage Contrast to Printed Circuit Board

LF-OCT Based Non Destructive Testing for IGBT Module

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Mechanism and Detection of Poly Gate Leakage with Nonvisual Defects by Voltage Contrast Inspection

Mechanism and Application of NMOS Leakage with Intra-Well Isolation Breakdown by Voltage Contrast Detection

Fast Method To Identify The Root Cause For Ild Vbd Fail

Methodology and Application of the Detection of Invisible Defect by Voltage Contrast Inspection

An improved method for test chip design

Alternative Voltage-Contrast Inspection for Pmos Leakage Due to Adjacent Nmos Contact-to-poly Misalignment

A Submodule Fault Ride-Through Strategy for Modular Multilevel Converters with Nearest Level Modulation

In Situ Diagnosis for IGBT Chip Failure in Multichip IGBT Modules Based on a Newly Defined Characteristic Parameter Low-Sensitive to Operation Conditions

A Statistical Submodule Open-circuit Failure Diagnosis Method for MMCs Enabling Failure Detection, Localization and Classification

In-situ Monitoring Chip Failure in Multichip IGBT Modules Using Turn-on Delay Time Extracted from Auxiliary Emitter Voltage

The detection and investigation of SRAM data retention soft failures by voltage contrast inspection

A failure mechanism of IGBT module in MMC and improvement

Synergistic Effect of BTI and Process Variations on Impact and Monitoring of Combination Circuit

A Scan-Chain-Based Built-in Self-Test for ILV in Monolithic 3-D ICs

Detection and Localization of Submodule Open-Circuit Failures for Modular Multilevel Converters with Single Ring Theorem

A Statistical Submodule Open-Circuit Failure Diagnosis Method for Modular Multilevel Converters (MMCs) With Variance Measurement

A Diagnosis Strategy for Multiple IGBT Open-Circuit Faults of Modular Multilevel Converters