Fast Method To Identify The Root Cause For Ild Vbd Fail

Z. H. Gan,Y. J. Wu,K. Zheng,R. Guo,C. C. Liao
DOI: https://doi.org/10.1109/ICSICT.2008.4734520
2008-01-01
Abstract:At the process development stage, the non-uniformity of the BEOL dielectric breakdown voltage (Vbd) in a wafer mapping is always observed. Such non-uniformity may be induced either by "interface-mode" or by "CD-mode". This paper provides a fast method to identify the root cause for ILD Vbd fail through analyzing the current-voltage (I-V) curves from the V-ramp test.
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