Abstract:Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been comprehensively studied at 5 nm node technology. TCAD simulation results show that the device off-leakage, including subthreshold leakage through the channel (Isub) and punch-through leakage (IPT) in the sub-channel, is strongly related to the S/D recess process. Firstly, device electrical characteristics such as current density distributions, On/Off-state current (Ion, Ioff), subthreshold swing (SS), RC delay, and gate capacitance (Cgg) are investigated quantitatively for DC/AC performance evaluation and comparison according to S/D lateral recess depth (Lrcs) variations. For both device types, larger Lrcs will result in a shorter effective channel length (Leff), so that the Ion and Ioff simultaneously increase. At the constant Ioff, the Lrcs can be optimized to enhance the device’s drivability by ~3% and improve the device’s RC delay by ~1.5% due to a larger Cgg as a penalty. Secondly, S/D over recess depth (Hrcs) in the vertical direction severely affects the punch-through leakage in the Sub-Fin or bottom parasitic channel region. The NSFET exhibits less Ioff sensitivity provided that it can be well controlled under 12 nm since the bottom parasitic channel is still gated. Furthermore, with both Hrcs and Lrcs accounted for in the device fabrication, the NSFET still shows better control of the off-leakage in the intrinsic and bottom parasitic channel regions and ~37% leakage reduction compared with FinFETs, which would be critical to enable further scaling and the low standby power application. Finally, the S/D recess engineering strategy has been given: a certain lateral recess could be optimized to obtain the best drive current and RC delay, while the vertical over-recess should be in tight management to keep the static power dissipation as low as possible.

Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization

Channel Stress Engineering Through Source/Drain Recess Optimization and Its Process Variation Study for 5 Nm-Node FinFETs

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Interconnection Reliability on FinFET Devices

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Multiphysics Simulation of Chiplet Integration Process-Induced Stress Effects on AC and DC Quantum Transport of FinFET from System Technology Co-Optimization Perspective

Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 Nm Node

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

T-FinFET Mobility Enhancement from Process-Induced Stress and Compact Model Development

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Layout-dependent STI Stress Analysis and Stress-Aware RF/analog Circuit Design Optimization.

Finfet Reliability Issue Analysis by Forward Gated-Diode Method

Characteristics Of N-Mosfets With Stress Effects From Neighborhood Devices

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors

FinFET reliability study by forward gated-diode method

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

FinFET Reliability Analysis by Forward Gated-Diode Method

Improved Subthreshold Characteristics of Epi-Silicon FinFET via Fin Surface Passivation Technologies

An Efficient Finite-Element Method-Based Stress Simulator for Integrated Circuit Optimization Designs

Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV Spectroscopy