Abstract:In this article, we systematically investigate the OFF-state drain-voltage-stress-induced threshold voltage ( $V_{\mathrm {TH}}$ ) instability in Schottky-type p-GaN gate high electron mobility transistors (HEMTs). OFF-state drain-voltage stress and recovery tests were conducted under various temperatures and different drain biases. A sharp increase in $V_{\mathrm {TH}}$ was observed at the beginning of the stress, and $V_{\mathrm {TH}}$ kept shifting positively during the stress until it reached saturation. Further experiments showed that two different mechanisms dominated the $V_{\mathrm {TH}}$ shift, which were distinguished by the temperature dependence, degradation/recovery process and affected locations in the gate region. The hole deficiency caused by hole emission from the p-GaN layer is suggested to be the dominant reason for the $V_{\mathrm {TH}}$ instability at the beginning of the stress, while with increasing stress time, electron trapping in the barrier and buffer layers gradually dominates the $V_{\mathrm {TH}}$ shift. Based on the identified mechanisms, physics-based analytical calculations and empirical fitting are conducted to describe the $V_{\mathrm {TH}}$ behavior during the OFF-state drain-voltage stress. The fundamental mechanisms can provide a guide to develop corresponding methods to address the drain-induced $V_{\mathrm {TH}}$ instability issue.

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