Abstract:An (a-IGZO TFT) is modeled through experimental-based (a-IGZO TFTs) using (TCAD) simulator. A parametric study is performed on the numerical fit of the designed (a-IGZO TFT) current–voltage (I/V) characteristics, to obtain the near conduction band defects parameters optimal values, and to investigate the effect of the near band defects caused by oxygen vacancies on the (a-IGZO TFTs) output parameters. A new model approach is proposed for simulating (a-IGZO) electrical properties. The proposed model is known as a density of state models (DOS), and it is composed of two principal components, conduction band tail (left( {g_{ct}^{A} left( E ight)} ight)) and Gaussian distributed donor-like (left( {g_{G}^{D} left( E ight)} ight)). The study of the presented (DOS) models is based on both conduction band tail elements that are known as tail acceptor density ((g_{ta})) as well as tail acceptor energy ((E_{a})), and Gaussian distributed donor-like elements which are donor gaussian energy ((E_{D})) and donor gaussian distribution ((g_{gd})). Results show that the tail acceptor states defects ((g_{ta}), (E_{a})) near the conduction band is the cause of the mobility and gaussian donor distribution degradation near the conduction band, and it has a major impact on changes that occur in the subthreshold region data [threshold voltage (Vth), subthreshold swing (SS), and on-state/off-states current ratio (Ion/Ioff)].

A Dynamic Current Hysteresis Model for IGZO-TFT

Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits

A gate-stress-induced ΔVth model reflecting impact of electric field in IGZO thin film transistors

A Core Compact Model for IGZO TFTs Considering Degeneration Mechanism

Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

A unified drain current model for poly-Si and a-InGaZnO TFTs under different temperatures

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

On a Mott formalism for modeling oxide thin-film transistors

Self-Heating Stress-Induced Severe Humps in Transfer Characteristics of Amorphous InGaZnO Thin-Film Transistors

Roles of Hot Carriers in Dynamic Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress

Improvement of Sub-Threshold Current Models for A-Si:H Thin-Film Transistors

Low-Frequency Noise Modeling of Amorphous Indium–Zinc-Oxide Thin-Film Transistors

A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States

Current Temperature Stress Induced Threshold Degradation on Corbino A-Ingazno Transistors

Asymmetry Degradation Behavior Under Forward and Backward Overlap Dynamical Stress in Large-Size Amorphous InGaZnO TFT

A New Surface Potential and Physics Based Compact Model for A-Igzo TFTs at Multinanoscale for High Retention and Low-Power DRAM Application