Abstract:The thin-film transistor (TFT) is a popular tool for determining the charge-carrier mobility in semiconductors, as the mobility (and other transistor parameters, such as the contact resistances) can be conveniently extracted from its measured current-voltage characteristics. However, the accuracy of the extracted parameters is quite limited, because their values depend on the extraction technique and on the validity of the underlying transistor model. We propose here a new approach for validating to what extent a chosen transistor model is able to predict correctly the transistor operation. In the two-step fitting approach we have developed, we analyze the measured current-voltage characteristics of a series of TFTs with different channel lengths. In the first step, the transistor parameters are extracted from each individual transistor by fitting the output and transfer characteristics to the transistor model. In the second step, we check whether the channel-length dependence of the extracted parameters is consistent with the underlying model. We present results obtained from organic TFTs fabricated in two different laboratories using two different device architectures, three different organic semiconductors and five different materials combinations for the source and drain contacts. For each set of TFTs, our approach reveals that the state-of-the-art transistor models fail to reproduce correctly the channel-length-dependence of the transistor parameters. Our approach suggests that conventional transistor models require improvements in terms of the charge-carrier-density dependence of the mobility and/or in terms of the consideration of uncompensated charges in the carrier-accumulation channel.

Surface-potential-based Drain Current Model for Two-Dimensional Organic TFTs Using the Multiple Trapping and Release Conduction Theory

Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs

Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film Transistors

Drain Current Model for Antiambipolar Organic TFTs at Different Temperatures

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

On a Mott formalism for modeling oxide thin-film transistors

A potential-based analytic model for monocrystalline silicon thin-film transistors on glass substrates

Modeling of thin-film transistor device characteristics based on fundamental charge transport physics

Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

A Carrier-Based Analytic Drain Current Model Incorporating Velocity Saturation for Undoped Surrounding-Gate MOSFETs

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A More Accurate Potential-Based Drain Current Model for Bulk-Mosfets

Density-of-State and Trap Modeling of Low-Voltage Electric-Double-Layer TFTs

Critical Evaluation of Organic Thin-Film Transistor Models

Comparative Study of the Exponential-Trap-based and the Mobility-Based Space-Charge-limited Current Models for Organic Diode Modeling

Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs