Abstract:Ultrabroadband photoconduction is an emerging method providing the subgap density of states (DoS) directly on thin‐film transistors of amorphous oxide semiconductors. To suggest new routes to optimize transistor performance by controlling specific defect concentration, the sub‐gap density of states is found to vary significantly with the active channel composition, hydrogen concentration, metal etchants and plasma post‐processing methods. Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin‐film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnOx (a‐IGZO), UBPC identifies seven oxygen deep donor vacancy peaks that are independently confirmed by energetically matching to photoluminescence emission peaks. The subgap DoS from 15 different types of a‐IGZO TFTs all yield similar DoS, except only back‐channel etch TFTs can have a deep acceptor peak seen at 2.2 eV below the conduction band mobility edge. This deep acceptor is likely a zinc vacancy, evidenced by trap density which becomes 5‐6× larger when TFT wet‐etch methods are employed. Certain DoS peaks are strongly enhanced for TFTs with active channel processing damage caused from plasma exposure. While Ar implantation and He plasma processing damage are similar, Ar plasma yields more disorder showing a ≈2 × larger valence‐band Urbach energy, and two orders of magnitude increase in the deep oxygen vacancy trap density. Changing the growth conditions of a‐IGZO also impacts the DoS, with zinc‐rich TFTs showing much poorer electrical performance compared to 1:1:1 molar ratio a‐IGZO TFTs owing to the former having a ∼10 × larger oxygen vacancy trap density. Finally, hydrogen is found to behave as a donor in amorphous indium tin gallium zinc oxide TFTs.

Density-of-State and Trap Modeling of Low-Voltage Electric-Double-Layer TFTs

Modeling of Low-Voltage Oxide-Based Electric-Double-Layer Thin-Film Transistors Fabricated at Room Temperature

Modeling of Self-Assembled Inorganic Oxide Semiconductor Based Electric-Double-layer Thin Film Transistors

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Modeling Novel Double-In-Plane Gate Electric-Double-Layer Thin-Film and Nanoscale Transistors

On a Mott formalism for modeling oxide thin-film transistors

Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

(Invited) Thin-Film Transistor Accumulation-Mode Modeling

Impact of Interface Trap Distribution on the Performance of LTPS TFT

Surface-potential-based Drain Current Model for Two-Dimensional Organic TFTs Using the Multiple Trapping and Release Conduction Theory

Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs

Charge Trapping Model for Temporal Threshold Voltage Shift in A-Igzo TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator

Comparative Study on the Separate Extraction of Interface and Bulk Trap Densities in Indium Gallium Zinc Oxide Thin-Film Transistors Using Capacitance–Voltage and Current–Voltage Characteristics

Geometric Effect Elimination and Reliable Trap State Density Extraction in Charge Pumping of Polysilicon Thin-Film Transistors

A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{sio}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Extraction of bulk and interface trap densities in amorphous InGaZnO thin-film transistors

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

Modeling of Self-Aligned Vertical ZnO Thin-Film Transistors