Abstract:Carrier tunneling through ultrathin (1–3 nm) SiO2 layers in MOS (metal–oxide–silicon) structures is investigated using the Bardeen–Harrison transition probability method. Quantum mechanical wave function matching at the two abrupt potential boundaries of a trapezoidal Si/SiO2/Si barrier gives an electric-field dependent preexponential factor in the Wentzel–Kramers–Brillouin tunneling probability, which significantly affects the current–voltage characteristic at low fields. An analytical theory is employed to predict the relative importance of three elastic tunneling pathways (electrons, valence electrons, and holes) and two geometrical tunneling locations (channel region and source or drain overlap regions) in MOS transistors (MOSTs), showing (1) hole tunneling dominant in p+gate pMOST (p-channel MOST) at low gate voltages, and (2) overlap regions dominant prior to base-region inversion in both p+gate pMOST and n+gate nMOST (n-channel MOST). The analytic theory is used to analyze the experimental tunneling currents measured at the gate, source, well, and substrate terminals of sourced MOS capacitors to give the oxide thickness and impurity doping concentrations in the base and source regions.

Potential barrier modulation caused by high electric field stressing and its effects on the measurement of traps

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Trap kinetics in metal-oxide-semiconductor structures at high electric field

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Field Related Passivation of Interface Trap after High-Field Electron Injection

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

Electric-Field Effects on Electronic Tunneling Transport in Magnetic Barrier Structures

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Field-assisted Thermally Stimulated Current of Mobile Ions in a Dielectric Layer of a Metal–oxide–semiconductor Structure

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

Study of microscopic mechanisms in HAT-CN/NPB interface devices under consideration of trap action

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

An Electric-Opto Combined Measurement Method for Identifying Filled Traps in the Off-State of HEMTs with High Spatial Resolution